Allicdata Part #: | MMUN2138LT1GOSTR-ND |
Manufacturer Part#: |
MMUN2138LT1G |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 246MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | MMUN2138LT1G Datasheet/PDF |
Quantity: | 15000 |
3000 +: | $ 0.01687 |
6000 +: | $ 0.01521 |
15000 +: | $ 0.01323 |
30000 +: | $ 0.01191 |
75000 +: | $ 0.01058 |
150000 +: | $ 0.00882 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 246mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 (TO-236AB) |
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?The MMUN2138LT1G transistor is a single, pre-biased field effect transistor (FET) with a wide variety of applications. It is a N-channel, Logic-Level FET with an integrated gate resistor, making it ideal for a wide range of general purpose applications. Its small size and low standby current make it an excellent choice for low power applications such as switching, power management, and signal conditioning.
The MMUN2138LT1G has an operating range between -55°C and +150°C, making it suitable for use in a range of industrial and automotive applications. Its gate-source voltage capacity is between -2V and +12V. It also features a high-gain current mode, making it ideal for applications requiring precise current control. The MMUN2138LT1G is rated for a maximum current of 1.4A.
The working principle of the MMUN2138LT1G is based on the transfer of charges between the gate and the source of the FET. This transfer is controlled by the biasing current which is applied to the gate. The biasing current is supplied by the integrated gate resistor which is connected between the gate and the drain of the FET. The biasing current causes the FET to turn on and off in response to changes in the gate voltage. This action is used to control the flow of current in the device, thus enabling it to perform its various functions.
The MMUN2138LT1G is typically used in motor control, power switching, signal conditioning and power management applications. It is particularly suitable for step-down and step-up DC-DC converters, motor driver circuits, motor control systems and power supplies. It can also be used in high frequency applications such as switching circuits, signal transmission and signal processing.
The MMUN2138LT1G is an excellent choice for applications requiring a highly reliable and efficient FET. Its small size, low standby current and wide voltage range make it suitable for a wide range of applications. Its integrated gate resistor and high gain current mode make it ideal for applications requiring precise current control. Its wide operating temperature range and low on-resistance make it suitable for industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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