Allicdata Part #: | MMUN2237LT1GOSTR-ND |
Manufacturer Part#: |
MMUN2237LT1G |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 0.246W SOT-23 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | MMUN2237LT1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.01687 |
6000 +: | $ 0.01521 |
15000 +: | $ 0.01323 |
30000 +: | $ 0.01191 |
75000 +: | $ 0.01058 |
150000 +: | $ 0.00882 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 246mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
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The MMUN2237LT1G is a single, pre-biased bipolar junction transistor (BJT) that acts as a general purpose amplifier. It has a breakdown voltage of 40V and can be used in a variety of applications including audio and communications. This transistor is designed to operate in both linear and switching mode, but can be configured to operate specifically in one or the other.
The MMUN2237LT1G is a single-stage, pre-biased BJT, which means that the Collector to Base amplifier has already been biased, or set, before being powered. This transistor operates in a common emitter configuration, meaning that the base is connected to the input signal source and the collector is connected to the output. This type of connection has a high input impedance, meaning it does not interfere with the input signal and does not require a complex biasing network.
The MMUN2237LT1G is primarily used in audio applications, as it can easily amplify small signals and provide a good frequency response. It is also widely used in communications applications, as it can amplify signals with a high level of fidelity. In addition, it is also used in rotary devices, such as motors, as it can control the speed of rotation with a high degree of accuracy.
The MMUN2237LT1G’s working principle is based on the movement of electrons in a semiconductor material, such as silicon. In a BJT, when a small voltage is applied to the Base, it creates a current between the Collector and the Emitter, which controls the current flow in the transistor. This current is then amplified and moved to the output.
The MMUN2237LT1G is used mainly in consumer electronics, automotive, and industrial applications. Its main advantages are its low cost, high performance, and low power consumption. It is also relatively tolerant of harsh environmental conditions such as temperature, humidity, and vibration.
In conclusion, the MMUN2237LT1G is an inexpensive and efficient general-purpose BJT. It is well suited for use in audio and communications applications, as well as for use in rotary applications. Its pre-biased configuration makes it easy to use, and its low power consumption makes it suitable for battery operated devices.
The specific data is subject to PDF, and the above content is for reference
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