Allicdata Part #: | MMUN2211LT3-ND |
Manufacturer Part#: |
MMUN2211LT3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 246MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | MMUN2211LT3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 246mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMUN22**L |
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MMUN2211LT3 Application Field and Working Principle
MMUN2211LT3 is a new type of pre-biased single bipolar junction transistor (BJT), commonly used in amplifying and switching applications. It is the most commonly used transistor in the global market due to its low cost and high efficiency. It is widely used in automotive electronics, industrial controls, power lines, and audio equipment.
The MMUN2211LT3 has two terminals, the Collector (C) and the Emitter (E). The Emitter is different from the Collector, due to having its base also connected to it. As a result, the Emitter is usually connected to the ground or any other negative voltage source. The Collector is connected to the voltage source, usually the battery or the power supply.
The working principle of the MMUN2211LT3 is commonly referred to as the "collector-base bias". This procedure involves creating a current between the Collector and the Base by adjusting the voltage over them. This current will then pass through the transistor, allowing it to amplify or switch the input signal. This technique has the advantage of allowing the transistor to be turned on and off very quickly.
When the MMUN2211LT3 is used in amplifying applications, the current flowing between the Collector and the Base is modified according to the input signal. This increases or decreases the amount of current passing through the transistor, thus amplifying the input signal. It can also be used for switching applications, where the transistor is either fully open or fully closed depending on the current. This allows high-speed switching systems to be implemented.
In addition to its amplifying and switching applications, the MMUN2211LT3 can also be used for inductive and thermoelectric applications. The transistor can be used in an inductor to regulate the amount of current depending on the input signal. It can also be used as a thermoelectric generator to convert heat energy into electrical energy.
The MMUN2211LT3 is an efficient and reliable pre-biased single bipolar junction transistor. It is commonly used in a wide range of applications due to its low cost and high efficiency. It is primarily used in amplifying and switching circuits, but can also be used for inductive and thermoelectric applications. It is a versatile transistor and is one of the most widely used transistors in production.
The specific data is subject to PDF, and the above content is for reference
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MMUN2213LT1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 246MW S... |
MMUN2216LT1 | ON Semicondu... | -- | 1000 | TRANS PREBIAS NPN 246MW S... |
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