MMUN2215LT1 Allicdata Electronics
Allicdata Part #:

MMUN2215LT1-ND

Manufacturer Part#:

MMUN2215LT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 246MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: MMUN2215LT1 datasheetMMUN2215LT1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 246mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMUN22**L
Description

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MMUN2215LT1 Application Field and Working Principle

MMUN2215LT1 is a NPN type Single Pre-Biased Transistor that is used in many lighting and power applications, among others. The device features an integrated pre-bias circuit with temperature compensation that can provide a wide range of forward current of up to 1.25A and up to 27V reverse bias. The transistor is able to handle large currents of up to 100A and offers excellent temperature stability, making it an ideal choice for controlling high power loads.

The pre-bias circuit can be adjusted by changing the external bias resistor and wiring it in series with the transistor\'s base. The pre-bias circuit works by providing a constant voltage to the base of the transistor which allows the collector and emitter to be driven from the source. The base resistor is connected to a voltage reference source and must provide enough current flow to ensure the base-emitter voltage exceeds the minimum value required for the transistor to be conducting.

The MMUN2215LT1 is designed for general-purpose lighting and power applications. It can be used as a switching device in power supplies, reverse polarity protection circuits, lamp rectification and cooling fans. The transistor can also be used as an amplifier or driver in audio and other signal applications. The device offers a wide range of performance parameters and is available in different package styles.

The MMUN2215LT1 is an ideal choice for controlling high power loads as it has low on-state Resistance (RDS(ON)) and high collector-emitter breakdown voltage (VCEX). It also has high thermal stability and low gate-to-source capacitance (COSS). Due to its multiple features, it provides excellent switching performance and high frequency characteristics. Moreover, the device features a wide range of protection features such as over-current, over-voltage, under-voltage and short-circuiting protection.

In conclusion, the MMUN2215LT1 is a high power, great performance single-pre-biased transistor that is suited to a wide range of applications. It offers excellent temperature stability and is suitable for controlling high power loads. Moreover, the device features a number of protection features and is available in different package styles, making it a versatile and reliable choice for powering a variety of circuits and applications.

The specific data is subject to PDF, and the above content is for reference

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