MMUN2130LT1G

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The MMUN2130LT1G is an NPN Silicon Pre-Biased Bipolar Transistor used in a variety of electrical and electronics applications. This device is used in a wide range of fields, including automotive, industrial, and consumer applications. It is characterized as having an excellent combination of high current gain and low voltage drop, making it ideal for a variety of power supply applications.

The MMUN2130LT1G is a mono-polar, wide-bodied transistor with a 0.12 aperture. It is a pre-biased device, which means that it can be used without the need for an external bias circuit. The device also offers an improved second breakdown voltage and a fast switching time of approximately 6 ms. This feature makes it suitable for fast switching and high power operations.

The key working principle of the MMUN2130LT1G is its bipolar construction. This architecture means that the transistor is made up of two P-type and N-type diodes. It is these two diodes that work together to regulate and control the current flow through the device. When current is applied through the base, or gate, of the device, it acts as a switch to control the current flow, allowing it to be switched on or off as required.

The MMUN2130LT1G can be used in a variety of different applications, including in switching power supplies, high voltage voltage regulators, and digital circuits. It is also capable of handling high frequency switching applications, such as in DTV, DVD players, and HDTVs. The device is available with a wide range of current ratings, making it suitable for a variety of applications.

The MMUN2130LT1G is a high performance and reliable transistor that has been specifically designed to meet the needs of a variety of electrical and electronics applications. Its combination of excellent current gain, fast switching time, and low voltage drop makes it an ideal choice for a wide range of switching power supply applications.

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