MMUN2111LT1 Allicdata Electronics
Allicdata Part #:

MMUN2111LT1OSCT-ND

Manufacturer Part#:

MMUN2111LT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 246MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: MMUN2111LT1 datasheetMMUN2111LT1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 246mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMUN21**L
Description

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The MMUN2111LT1 is a single, pre-biased bipolar junction transistor (BJT) that provides a highly efficient amplifier and switching action. The MMUN2111LT1 is available in a wide variety of sizes and configurations, each with its own unique characteristics. The device has a temperature range of -65 to +150 degrees Celsius and is also suitable for operation in high-voltage and high-current applications. Its key features include low-voltage operation, low-input capacitance, high-output impedance, high-gain and high-frequency application selection.

This device has applications in many different fields, such as power and signal amplification, motor control, and optical applications. In power and signal amplification applications, the MMUN2111LT1 is often used to increase the signal strength or power output of appliances, such as TVs, amplifiers and radios. It is also used to convert voltage from AC to DC in motor control applications. In optical applications, the device is often used to amplify signals in light-based communication systems. Additionally, it can be used in medical imaging applications to detect faint signals that can’t be detected through traditional means.

The working principle of the MMUN2111LT1 is simple. The device contains two transistors, an N-channel and a P-channel. These two transistors, when connected together, form a single circuit. In this circuit, current flows from the positive lead of the N-channel transistor to the negative lead of the P-channel transistor. At the same time, current flows from the positive lead of the P-channel transistor to the negative lead of the N-channel transistor. This current flow creates an amplification effect that allows the small input signals to be amplified without introducing too much distortion.

The pre-biased circuit design allows for faster response times and more efficient operation of the device. In addition, it limits the need for extra external components, such as heat sinks, which can be costly and add unwanted complexity. This also makes the device much easier to use and increases its versatility in applications.

In conclusion, the MMUN2111LT1 is a useful single, pre-biased bipolar junction transistor that can be used in a wide range of applications. It is available in many different sizes and configurations, and it has a wide temperature range and a high-frequency operating range. It is well-suited to power and signal amplification, motor control and optical applications. Its working principle is based on the flow of current through two transistors, which creates an amplification effect. The pre-biased design allows for faster response times and more efficient operation, and it limits the need for external components.

The specific data is subject to PDF, and the above content is for reference

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