MMUN2114LT3G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	246mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	MMUN21**L

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Introduction

The MMUN2114LT3G is a pre-biased single bipolar junction transistor (BJT) that’s found in many modern electronic products and devices. It’s a tiny device with the size of a 2520 footprinted surface-mountable package that makes it an ideal addition to any design. It’s widely used in audio amplifiers, power supplies, and other low-noise applications. This article will discuss the various application fields of the MMUN2114LT3G, as well as its operating principle.

Application Fields

The MMUN2114LT3G is commonly used in a variety of applications, such as amplifiers, power supplies, and solar cells. Many audio applications use this device to reduce unwanted noise, as the device offers excellent performance in high-frequency operations. Furthermore, its high-gain characteristics makes it a great choice for RF applications, including intermediate frequency amplifiers, radio receivers, and direct detection of satellites. The MMUN2114LT3G is also known for its durability and has withstood high temperatures; this makes it useful in a variety of high-temperature applications, such as automotive applications. The easy-to-use package also makes it an ideal choice for robotic applications where size and efficiency are important factors. Finally, the MMUN2114LT3G can also be used in energy harvesting applications to help capture energy from sources such as solar panels and wind turbines.

Working Principle

The MMUN2114LT3G is a pre-biased single transistor that operates by converting current into voltage. It contains two PNP transistors, with one connected as the base region and the other connected as the collector region. A bias voltage is applied to the base region and an input current is connected to the collector region. The current flow then causes a voltage drop across the collector of the transistor. The voltage is then amplified and applied to an output stage to produce the desired audio or RF signal. The key to the MMUN2114LT3G’s performance lies in its pre-bias configuration, which allows for more efficient operation compared to non-prebiased devices. When a voltage is applied to the base of the transistor, it results in an increase in the current flow through the collector region, which in turn results in a higher voltage gain. This allows the device to operate with a high frequency and low noise performance.

Conclusion

The MMUN2114LT3G is a popular pre-biased single BJT that’s ideal for many audio and RF applications. It offers excellent performance in high-frequency operations, as well as high-temperature durability for automotive applications. The device also offers a high-gain feature for RF applications and efficient operation for energy harvesting applications. Its easy-to-use package makes it suitable for robotic applications, where size and efficiency are important factors. Finally, the pre-bias feature allows the MMUN2114LT3G to offer superior performance compared to other non-prebiased transistors.

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