Allicdata Part #: | MMUN2241LT1OS-ND |
Manufacturer Part#: |
MMUN2241LT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 246MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | MMUN2241LT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 246mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMUN22**L |
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MMUN2241LT1 application field and working principle
MMUN2241LT1 is a high-power bipolar junction transistor (BJT) manufactured by STMicroelectronics, which is classified under the single, pre-biased transistors. It is mainly used applications that require high voltage and high current but low switching overhead, such as load switching and Class-D audio amplifiers.
Working principle
NPN transistors, of which the MMUN2241LT1 is, are three layer semiconductor structures, which serve as a current amplifying device. The transistor consists of two p-n junctions, with a common base terminal that serves as a control voltage source. When no voltage is applied to the base terminal, the transistor doesn\'t conduct current, serving as an open switch. However, when a positive voltage is applied to the base terminal, a large current can flow from the collector to the emitter. This concept can be understood by the fact that a tiny voltage applied to the base terminal can be amplified to control a much larger collector-emitter current.
Structure
The MMUN2241LT1 is a voltage-controlled, single, pre-biased BJT, composed of two distinct N-type layers, which produces a common P-type layer sandwiched in the middle of them. The two N-type layers form the emitter and collector terminals, while the P-type layer forms the base terminal which is used to control the flow of current. As this type of transistor is typically voltage-controlled, the current output is determined by the voltage supplied to the base terminal.
Application field
The MMUN2241LT1 is well-suited for use in applications that require high voltage and high current but low switchover time, such as load switching and Class-D audio amplifiers. It can also be used in signal amplifier and other high power applications, such as AC/DC power supply, low power motor control, etc. Furthermore, the MMUN2241LT1 is well-suitable for use in automotive and industrial applications due to its high power, high temperature ratings and compact size.
Conclusion
The MMUN2241LT1 is a single, pre-biased bipolar junction transistor (BJT) manufactured by STMicroelectronics, ideal for applications that require high voltage, high current and low switching overhead. The transistor is mainly composed of two N-type layers that form the emitter and collector terminals, and a P-type layer which forms the base terminal. This device can be used in the applications that require high voltage and high current but low switchover time, such as load switching and Class-D audio amplifiers, as well as other applications such as signal amplifier and other high power applications. It is also well-suited for use in automotive and industrial applications due to its high power, high temperature ratings and compact size.
The specific data is subject to PDF, and the above content is for reference
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