MMUN2232LT1G Discrete Semiconductor Products |
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Allicdata Part #: | MMUN2232LT1GOSTR-ND |
Manufacturer Part#: |
MMUN2232LT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 246MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | MMUN2232LT1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 246mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMUN22**L |
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MMUN2232LT1G is a type of pre-biased, single bipolar junction transistor (BJT). BJTs have various applications in amplifying, switching, voltage regulation, signal processing and so on. MMUN2232LT1G is a type of NPN BJT with a maximum DC current gain of 160. It can handle a collecting current of up to 100mA and a collector voltage up to 10V, providing good performance and reliability in power electronic devices.
The working principle of the MMUN2232LT1G lies in its construction. It is composed of three main elements: an emitter, base, and collector. The emitter and collector are separated by a thin base region. The emitter obtains electrons from the energy source while the collector initiates the capture of these electrons and carries them to the load. The base acts as the control element, controlling the flow of electrons from the emitter to the collector. In a pre-biased arrangement, the base-collector junction is reverse biased, which helps to reduce switching losses and gives the device better performance.
MMUN2232LT1G is widely used for general power amplifying and switching applications. It is suitable for use in high-frequency, low-power or medium-power switching applications such as in power converters and power supplies. Its high current gain makes it suitable for low-voltage, current-gain controlled switching applications such as those found in switching mode power supplies. It is also well suited for audio amplifier and signal conditioning applications.
The MMUN2232LT1G is also used in various motor control applications, such as motor speed control, motor current sensing, and motor protection. Its high current gain and switching capability makes it ideal for driving and controlling DC motors. It is also used in other applications such as temperature control, light control, and solenoid control. It is suitable for a variety of applications and can replace other types of transistors in various control circuits.
In conclusion, the MMUN2232LT1G transistor is a reliable, pre-biased, single-bipolar junction transistor that is capable of providing good performance and reliability when used in power electronic devices. Its high current gain, low switching losses, and wide range of applications make it a suitable option for many applications, from audio amplifiers and motor control to temperature control and light control.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MMUN2132LT1G | ON Semicondu... | -- | 21000 | TRANS PREBIAS PNP 246MW S... |
MMUN2212LT1G | ON Semicondu... | 0.01 $ | 24000 | TRANS PREBIAS NPN 246MW S... |
MMUN2234LT1G | ON Semicondu... | 0.01 $ | 45000 | TRANS PREBIAS NPN 0.246W ... |
MMUN2231LT1G | ON Semicondu... | -- | 36000 | TRANS PREBIAS NPN 246MW S... |
MMUN2216LT1G | ON Semicondu... | 0.01 $ | 3000 | TRANS PREBIAS NPN 0.4W SO... |
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MMUN2213LT1G | ON Semicondu... | 0.01 $ | 1000 | TRANS PREBIAS NPN 246MW S... |
MMUN2114LT3G | ON Semicondu... | 0.01 $ | 1000 | TRANS PREBIAS PNP 246MW S... |
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MMUN2140LT1G | ON Semicondu... | 0.01 $ | 1000 | TRANS PREBIAS PNP 246MW S... |
MMUN2141LT1G | ON Semicondu... | 0.01 $ | 1000 | TRANS PREBIAS PNP 246MW S... |
MMUN2236LT1G | ON Semicondu... | 0.01 $ | 1000 | TRANS PREBIAS NPN 0.246W ... |
MMUN2130LT1G | ON Semicondu... | -- | 1000 | TRANS PREBIAS PNP 246MW S... |
MMUN2232LT1G | ON Semicondu... | -- | 1000 | TRANS PREBIAS NPN 246MW S... |
MMUN2240LT1G | ON Semicondu... | 0.01 $ | 1000 | TRANS PREBIAS NPN 0.246W ... |
MMUN2237LT1G | ON Semicondu... | 0.02 $ | 1000 | TRANS PREBIAS NPN 0.246W ... |
MMUN2138LT1G | ON Semicondu... | 0.02 $ | 15000 | TRANS PREBIAS PNP 246MW S... |
MMUN2217LT1G | ON Semicondu... | 0.02 $ | 18000 | TRANS PREBIAS NPN 0.246W ... |
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MMUN2113LT1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS PNP 246MW S... |
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MMUN2211LT1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 246MW S... |
MMUN2212LT1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 246MW S... |
MMUN2213LT1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 246MW S... |
MMUN2216LT1 | ON Semicondu... | -- | 1000 | TRANS PREBIAS NPN 246MW S... |
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