MMUN2133LT1G Allicdata Electronics

MMUN2133LT1G Discrete Semiconductor Products

Allicdata Part #:

MMUN2133LT1GOSTR-ND

Manufacturer Part#:

MMUN2133LT1G

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 246MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: MMUN2133LT1G datasheetMMUN2133LT1G Datasheet/PDF
Quantity: 39000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
3000 +: $ 0.01366
6000 +: $ 0.01232
15000 +: $ 0.01072
30000 +: $ 0.00965
75000 +: $ 0.00857
150000 +: $ 0.00714
Stock 39000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 246mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMUN21**L
Description

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MMUN2133LT1G is a Dual NPN transistor from ON Semiconductor family. It is a pre-biased silicon epitaxial NPN transistor designed for high-production automated assembly. The product features high Hfe and fast switching. It consists of two NPN transistors in a single package, which are connected as a Darlington pair.

The MMUN2133LT1G is mainly used in signal amplification, signal switching and temperature sensing applications. It can be used in a variety of applications including audio, telecommunications, computers and power management. The device can be used as an output stage transistor driver and in a high-side current sensing circuit. It is also useful for current limiting and over-temperature protection.

The MMUN2133LT1G is a single, pre-biased transistor. It is designed to reduce the need for manual assembly and thereby reducing costs. The pre-biased feature eliminates the need for manually biasing the two transistors in the device, which has already been adjusted to the optimum values. This feature also reduces the complexity of the design, as only one pair of resistors is needed in the power supply.

The MMUN2133LT1G is designed to operate at a wide range of frequencies. The device has an operating frequency range of100 kHz to 1 MHz. The device can be used in a wide range of temperature ranges, including commercial, automotive and military temperature ranges. The device is also suitable for use in wide temperature ranges, with a maximum temperature rating of 175°C.

The working principle of the MMUN2133LT1G is based on the NPN transistor structure. The device consists of two NPN transistors that are connected in series with each other. The base of the first transistor is connected to the emitter of the second transistor. When the base-emitter junction of the first transistor is forward biased, the current will flow from the emitter of the second transistor to the collector of the first transistor.

The MMUN2133LT1G can be used for a wide range of applications, such as high-side current sensing, audio, telecommunications, computers and power management. Its pre-biased feature helps reduce assembly costs and complexity as only one pair of resistors are needed. The device also has a wide operating frequency range and can withstand extreme temperatures. This makes it a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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