Allicdata Part #: | MMUN2112LT1GOSTR-ND |
Manufacturer Part#: |
MMUN2112LT1G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 246MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | MMUN2112LT1G Datasheet/PDF |
Quantity: | 36000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.01400 |
6000 +: | $ 0.01263 |
15000 +: | $ 0.01098 |
30000 +: | $ 0.00988 |
75000 +: | $ 0.00878 |
150000 +: | $ 0.00732 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 246mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMUN21**L |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MMUN2112LT1G is one of the most popular transistors on the market today. It is a single, pre-biased, bipolar junction transistor (BJT) that is designed to be used in a wide variety of applications. In this article, we will look at the applications and working principles of the MMUN2112LT1G.
The MMUN2112LT1G is designed with a built-in bias that allows it to be used in applications that do not require the user to supply external bias. This means that it is ideal for applications where the other components of the circuit are in close proximity to one another, such as automotive circuits, medical devices, and audio-video equipment, and where the user does not want to worry about supplying external bias for improved performance.
The MMUN2112LT1G is also designed to be able to handle higher powers, making it ideal for applications where a higher load and higher current draw is required. Examples of such applications include motor control, LED lighting, and high-voltage, high-current situations.
The MMUN2112LT1G is also a good choice for applications where the user needs good linearity and stability, as the device is designed to reduce variation in current draw and voltage changes as the device heats up. This makes it suitable for applications that require quick and accurate changes in current levels, such as automotive systems, medical devices and audio-visual equipment.
The MMUN2112LT1G is a high-speed transistor and is designed to operate at frequencies up to 200 MHz, making it suitable for applications such as RF amplifiers, low-noise amplifiers, high-speed switching and data acquisition.
The MMUN2112LT1G has a simple working principle. When a voltage is applied to the base, it causes a small current to flow from the base to the emitter. This in turn causes a larger current to flow from the collector to the emitter, allowing a larger current to flow through the device. When the voltage is removed from the base, the current flow is stopped and the device is turned off.
The MMUN2112LT1G is a highly versatile device and is suitable for a wide range of applications. It is a good choice for automotive circuits, medical devices, audio-visual equipment, RF amplifiers, low-noise amplifiers, high-speed switching and data acquisition, motor control, LED lighting, and other applications that require quick and accurate changes in current levels.
The specific data is subject to PDF, and the above content is for reference
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