MMUN2112LT1G Allicdata Electronics
Allicdata Part #:

MMUN2112LT1GOSTR-ND

Manufacturer Part#:

MMUN2112LT1G

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 246MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: MMUN2112LT1G datasheetMMUN2112LT1G Datasheet/PDF
Quantity: 36000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
3000 +: $ 0.01400
6000 +: $ 0.01263
15000 +: $ 0.01098
30000 +: $ 0.00988
75000 +: $ 0.00878
150000 +: $ 0.00732
Stock 36000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 246mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMUN21**L
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MMUN2112LT1G is one of the most popular transistors on the market today. It is a single, pre-biased, bipolar junction transistor (BJT) that is designed to be used in a wide variety of applications. In this article, we will look at the applications and working principles of the MMUN2112LT1G.

The MMUN2112LT1G is designed with a built-in bias that allows it to be used in applications that do not require the user to supply external bias. This means that it is ideal for applications where the other components of the circuit are in close proximity to one another, such as automotive circuits, medical devices, and audio-video equipment, and where the user does not want to worry about supplying external bias for improved performance.

The MMUN2112LT1G is also designed to be able to handle higher powers, making it ideal for applications where a higher load and higher current draw is required. Examples of such applications include motor control, LED lighting, and high-voltage, high-current situations.

The MMUN2112LT1G is also a good choice for applications where the user needs good linearity and stability, as the device is designed to reduce variation in current draw and voltage changes as the device heats up. This makes it suitable for applications that require quick and accurate changes in current levels, such as automotive systems, medical devices and audio-visual equipment.

The MMUN2112LT1G is a high-speed transistor and is designed to operate at frequencies up to 200 MHz, making it suitable for applications such as RF amplifiers, low-noise amplifiers, high-speed switching and data acquisition.

The MMUN2112LT1G has a simple working principle. When a voltage is applied to the base, it causes a small current to flow from the base to the emitter. This in turn causes a larger current to flow from the collector to the emitter, allowing a larger current to flow through the device. When the voltage is removed from the base, the current flow is stopped and the device is turned off.

The MMUN2112LT1G is a highly versatile device and is suitable for a wide range of applications. It is a good choice for automotive circuits, medical devices, audio-visual equipment, RF amplifiers, low-noise amplifiers, high-speed switching and data acquisition, motor control, LED lighting, and other applications that require quick and accurate changes in current levels.

The specific data is subject to PDF, and the above content is for reference

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