MMUN2114LT1G Discrete Semiconductor Products

Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	MMUN21**L
Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	246mW
Mounting Type:	Surface Mount

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Introduction to the MMUN2114LT1G

The MMUN2114LT1G is a single, pre-biased, bipolar junction transistor (BJT) designed for a variety of applications. It is made up of a NPN (negative/positive/negative) arrangement of doped semiconductor material containing two p-n junctions. This particular model has an integrated base-emitter resistor and collector current limiting resistor. As a result, it can provide superior performance in a variety of applications including power control, video amplification, voltage regulation, and linear amplification.

Application Fields of the MMUN2114LT1G

The MMUN2114LT1G is ideal for applications in which power control, video amplification, voltage regulation, and linear amplification are desired. For example, it can be used as a regulator in capacitors, as a power amplifier in battery-powered electronics, and as a linear amplifier in broadcasting gear. It has been designed to provide excellent efficiency, stability, and accuracy when used in these types of applications.

MUN2114LT1G Working Principle

The MUN2114LT1G utilizes a NPN BJT configuration of doped semiconductor material, as mentioned earlier. Two p-n junctions are created within the chip. The collector and emitter junctions allow current to flow in one direction, while the base-emitter junction allows current to flow in the opposite direction. This process, known as recombination, causes the positive charge carriers and negative charge carriers to recombine and release the energy, creating new potential across the transistor.The two p-n junctions form a three-layer structure and create an internal electric field that not only separates the holes and electrons but also destabilizes the transistor\'s internal structure. This instability, in turn, influences the amount of current that passes through it. By altering the amount of base-emitter voltage and collector-emitter voltage, it is possible to control the amount of current that passes through the device.Because of its integrated base-emitter resistor and collector current limiting resistor, the MMUN2114LT1G can provide exceptional performance in applications such as power control, video amplification, voltage regulation, and linear amplification. It is designed to provide superior efficiency, stability, and accuracy when used in these types of applications.

Conclusion

The MMUN2114LT1G is an excellent choice for a variety of applications in which power control, video amplification, voltage regulation, and linear amplification are desired. Its integrated base-emitter resistor and collector current limiting resistor provide superior performance for these types of applications, and it is designed to provide superior efficiency, stability, and accuracy when used in these types of applications.

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