Allicdata Part #: | MMUN2115LT1GOSTR-ND |
Manufacturer Part#: |
MMUN2115LT1G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 0.4W SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | MMUN2115LT1G Datasheet/PDF |
Quantity: | 18000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.01366 |
6000 +: | $ 0.01232 |
15000 +: | $ 0.01072 |
30000 +: | $ 0.00965 |
75000 +: | $ 0.00857 |
150000 +: | $ 0.00714 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 400mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMUN21**L |
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A pre-biased MMUN2115LT1G transistor is a device that is specially designed to be used when biasing is required in the device. It is part of the “NMOS” family of transistors and is very popular in applications where precision power level control is needed. It can also be used for switching applications. Pre-biasing a transistor means selectively providing a specific voltage or current through the device.
The MMUN2115LT1G is a single bipolar junction transistor (BJT). It is an N-channel device, constructed using a process called UralCup (using silicon combined with metal gates). It is designed to operate at 5V and is used as a high-frequency switch transistor. The device package has a shielded metal dome to minimize electrical noise in order to achieve optimal performance. It is a low voltage, high frequency switch with an integrated protection diode.
The major application of the MMUN2115LT1G is to be used as an amplifier. It can be used for amplifying low-level audio signals or for powering electronic circuits. It can also be used for power switching applications, such as in a power supply to provide active current limiting. Furthermore, it can be used as a drive transistor to give temporary power to a load, such as a motor.
The MMUN2115LT1G has an input impedance of about 8K ohms. Its current gain is typically between 90 to 300 and the output impedance is in the range of 25 ohms to 80 ohms. This means that the transistor has a good drive capability and can supply the required current for most applications. The device also has a low VBe which makes it suitable for high frequency switching applications.
The working principle of the MMUN2115LT1G is similar to other transistors. It is a voltage controlled device and can be used both as a switch and an amplifier. In order to increase the current gain of the device, a base resistor is used that sets the bias current of the device. When the base voltage is high, more current will be passed to the collector and the device is in an ON state, while when the base voltage is low, less current will be passed to the collector and the device is in a OFF state.
The MMUN2115LT1G is an excellent choice for applications that require high-frequency switching, or for amplifier circuitry. It is a low voltage and a low noise device and can be used in a variety of applications. Its pre-biased design guarantees good gain levels, and due to its integrated protection diode, it can be used in a variety of circuit configurations.
The specific data is subject to PDF, and the above content is for reference
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