MMUN2141LT1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	246mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23 (TO-236AB)

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The MMUN2141LT1G is a member of the single pre-biased bipolar junction transistor (BJT) family. This BJT has characteristics and features which make it perfect for a wide range of applications and allows it to be used in a variety of ways. In this article, we will discuss the MMUN2141LT1G’s application field and the working principle. ApplicationThe MMUN2141LT1G is a high performance, low power single pre-biased bipolar junction transistor which can be used in many applications from medical and consumer electronics to industrial and automotive applications. It has an extremely low on-resistance of 0.05 Ω and low saturation voltage (0.4V) at currents of up to 250mA, which make it ideal for power management and switching applications. It can also be used in circuit protection applications, as it is capable of handling transient voltage up to 6V. Additionally, its high slew rate of 250 V/us makes it suitable for high speed switching.The MMUN2141LT1G is also ideal for switching and control applications. It can be used to control the power supply or used as a driver for MOSFETs and IGBTs. It also has a wide temperature range of -55°C to +125°C, making it suitable for some aerospace applications as well. Additionally, it has superior RDS(on) performance while operating at a low supply voltage, making it perfect for energy efficiency applications.Working PrincipleThe MMUN2141LT1G is a single pre-biased bipolar junction transistor that consists of two pn-junction diodes connected parallel and oppositely-biased. This BJT utilises the concept of electron transport to amplify the electric current. Essentially, when a voltage is applied to the base-emitter junction, it creates potential barriers between the holes and electrons. As the electric current flows from the base-emitter junction to the collector-emitter junction, some of the electrons are attracted by the potential barrier and jump across the gap. This then amplifies the electron flow resulting in a larger electric current flowing from the collector-emitter junction.The MMUN2141LT1G uses its low-level output controls and its low saturation voltage to provide high-efficiency, fast power switching which makes it perfect for various applications. Additionally, it has a wide range of operation temperatures so it can be used for a variety of different applications and is also suitable for use in a wide range of industrial, medical and automotive applications.ConclusionIn conclusion, the MMUN2141LT1G is a high performance and low power single pre-biased bipolar junction transistor which is ideal for many applications from medical to automotive and industrial. It has a low-level output controls and low saturation voltage, making it perfect for power management, switching and control applications as well as for circuit protection applications. Additionally, its wide range of operation temperatures make it suitable for use in a wide range of applications.

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