| Allicdata Part #: | MRF13750HSR5-ND |
| Manufacturer Part#: |
MRF13750HSR5 |
| Price: | $ 193.56 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | RF POWER LDMOS TRANSISTOR 750 W |
| More Detail: | RF Mosfet LDMOS 50V 200mA 700MHz ~ 1.3GHz 20.4dB 7... |
| DataSheet: |  MRF13750HSR5 Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 175.95900 |
Specifications
| Series: | -- |
| Part Status: | Active |
| Transistor Type: | LDMOS |
| Frequency: | 700MHz ~ 1.3GHz |
| Gain: | 20.4dB |
| Voltage - Test: | 50V |
| Current Rating: | 10µA |
| Noise Figure: | -- |
| Current - Test: | 200mA |
| Power - Output: | 750W |
| Voltage - Rated: | 105V |
| Package / Case: | NI-1230S-4S |
| Supplier Device Package: | NI-1230S-4S |
Description
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MRF13750HSR5 is a type of high power enhancement mode N-channel RF Mosfet designed to switch and amplify low level RF signals. It is ideal for use in low power applications that require high transmission gain, such as cellular base stations, personal communication systems, and low power RF transmitters.This Mosfet is designed to provide low insertion loss, low thermal resistance, high input impedance, and excellent linearity. The device is capable of operating at frequencies up to 3GHz and comes in a RoHS compliant SOT-363 package.The MRF13750HSR5 Mosfet is based on a three-layer p-channel structure. It consists of a heavily doped silicon substrate, a sensitive gate oxide layer, and a gate electrode. The gate oxide layer and gate electrode form a depletion layer when the gate voltage is low and a conducting channel when the gate is biased at higher voltages. The substrate is connected to the drain and the gate is connected to the source.The primary applications for the MRF13750HSR5 are in low power RF transmitters, cellular base stations, and personal communication systems. It is designed to provide low insertion loss and low thermal resistance, making it ideal for these types of applications.In operation, the MRF13750HSR5 has a low gate to source voltage, usually less than 12 volts. This provides a good signal to noise ratio, allowing it to handle wideband signals with low distortion and noise. The device also has a high power handling capacity, making it suitable for low power transmitters.Using the MRF13750HSR5 in an RF circuit requires a few design considerations. The device is best suited for applications that require high input impedance and low voltage operation. In addition, the device should be protected from electrostatic discharge by providing an appropriate shielding or through special coating techniques. The output signal should also be filtered to provide a low noise signal.The MRF13750HSR5 is a versatile device that can fit a variety of low power RF applications. It has excellent performance characteristics, making it an ideal choice for applications such as cellular base stations and personal communication systems. As with any RF device, it is important to follow proper design and application guidelines to ensure optimum performance.
The specific data is subject to PDF, and the above content is for reference
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