MRF1513NT1 Discrete Semiconductor Products

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The MRF1513NT1 is a N-channel enhancement-mode lateral Field Effect Transistor (FET). These RF power LDMOS transistors are designed for broadband commercial and industrial applications. They offer significant advantages over other types of power transistors. With the right device selection, RF power transistors can provide reliable and consistent performance over a wide range of applications and power levels.

MRF1513NT1 is a cost-effective, high-performance device with higher power density and improved efficiency compared to competing LDMOS power FETs. It is designed to withstand high drain-source voltage (VDS = 48 V) and is well suited for use in linear and Class-D applications. It offers excellent performance over the Industrial, Scientific, and Medical (ISM) band, particularly in the 2.4 – 2.5 GHz frequency range.

MRF1513NT1 can be used for a variety of applications, such as RF amplifiers, low-noise, high-power OUT EDGE, direct conversion radio modules, and more. It provides improved efficiency, resulting in higher power output, while also reducing the overall system costs. It is also ideal for high efficiency linear amplifiers, such as the GaAs FET. The device also has guaranteed high-altitude operation performance, with improved thermal performance.

The working principle of MRF1513NT1 is based on the physics of a FET. A FET, or field-effect transistor, is an active three-terminal semiconductor device with an insulated-gate based on an electric field where the current through the device is modulated by an external electrical field. As a result of this field-effect principle, FETs are capable of working in the voltage-controlled region of operation. The MRF1513NT1 utilises this principle by controlling the current and voltage between its Drain and Source terminals.

The device is fabricated with an insulated-gate structure, which enables a high transconductance, low noise figure and improved robustness. Drain-source breakdown voltage is rated at 48 V, while the peak drain current is rated at a maximum of 7 A. Input and output impedance characteristics of the device are 50 Ohms and a maximum of 2 Ohms, respectively. It also features both self-protection circuitry and an integrated ESD protection diode.

MRF1513NT1 has an on-resistance of 250 mOhms and an on resistance of 70 mOhms, making it suitable for applications such as PA stages and low noise OUT EDGE wireless systems. The device is capable of providing a high peak power of up to 315 W output power and 41 dB gain at 2450 MHz with a drain efficiency of more than 48%. The power handling capability of the device increases as the frequency reduces.

In conclusion, MRF1513NT1 is a versatile power transistor for applications in the ISM band. Its excellent power handling capabilities and low dissipated power make it ideal for powering efficient amplifiers for cellular base station, point-to-point and point-to-multipoint systems. Additionally, the built-in ESD protection and self-protection circuitry makes it a reliable device that can be used in a variety of applications.

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