MRF6S18140HSR5

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RF field-effect-transistors (RF FETs) are a type of transistor used in radio-frequency (RF ) applications, such as radio receivers, transmitters and amplifiers, digital-to-analog and analog-to- digital converters, and microwave circuits. MRF6S18140HSR5 is a prominent example of RF FETs. This article focuses on the application field and working principle of the MRF6S18140HSR5.

The MRF6S18140HSR5 is a laterally diffused silicon MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is designed specifically for RF applications with high switching rate, high breakdown voltage and low input capacitances. It combines performance and economy in a plastic TO-247 package.

The MRF6S18140HSR5 is suitable for use in high-frequency and high-power applications. It is primarily used in FM broadcast and mobile phone applications such as amplifier, oscillator and switch stages. It also finds application in high power amplifiers for UHF television, high power television amplifiers and CATV amplifiers.

The design of the MRF6S18140HSR5 allows it to be used in circuit configurations that require low input capacitance, fast switching speed and high output power. It features a specific on-resistance which is optimized for high-power applications, while the on-capacity is controlled to ensure low quiescent drain current and high reliability.

The MRF6S18140HSR5 also has good thermal stability and excellent RF performance. Its high breakdown voltage is suitable for audio mobile radiowave amplification and other hi-power applications. The device works by transferring signal input at gate voltage to drain voltage. When the gate voltage increases, the cut-off current for the MOSFET decreases, allowing the flow of drain current. When the voltage supplied to the gate is reduced, the MOSFET gets cut-off abruptly and ceases to allow the flow of drain current.

In conclusion, the MRF6S18140HSR5 is a laterally diffused silicon MOSFET designed for RF applications and is suitable for use in high-frequency and high-power applications. It combines performance and economy in a plastic TO-247 package and can be used in circuit configurations that require low input capacitance, fast switching speed and high output power. It is suitable for applications such as FM Broadcast, mobile phone amplifiers and high power UHF television amplifiers.

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