MRF6VP41KHR5

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Transistor Type:	LDMOS (Dual)
Frequency:	450MHz
Gain:	20dB
Voltage - Test:	50V
Current Rating:	--
Noise Figure:	--
Current - Test:	150mA
Power - Output:	1000W
Voltage - Rated:	110V
Package / Case:	NI-1230
Supplier Device Package:	NI-1230
Base Part Number:	MRF6VP41

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MRF6VP41KHR5 Application Field and Working Principle

MRF6VP41KHR5 is a high-power RF (radio frequency) MOSFET transistor (metal-oxide semiconductor field-effect transistor) manufactured by the US advanced wireless communication device producer, NXP. It has high-efficiency capabilities bringing reliable performance to wireless applications and is incredibly versatile, making it a popular choice for a wider range of RF applications from cell phones and cellular infrastructure to point-to-point and point-to-multipoint radio systems.The MRF6VP41KHR5 RF MOSFET is a depletion-mode device, commonly used in class C amplifier circuits, voltage and current amplifiers, oscillators and frequency multipliers, switching circuits and a wide range of other amplifying and switching applications. The transistor has a maximum drain-source voltage (VDS) rating of 50 V and a maximum drain-source on-resistance (Rds) rating of 0.30ohm. This means the MRF6VP41KHR5 can easily handle high currents up to 100A and is suitable for a wide range of RF amplifier applications.In order to understand the working principle of the MRF6VP41KHR5, it is important to understand how it works. The transistor is a voltage-controlled device, with voltage applied across the drain-source (Vds) terminals to adjust the flow of current through the transistor. This voltage causes a charge to be built up that affects the transistor’s impedance (resistance to current flow), making it easier for current to pass through the transistor.The current flow through the transistor is determined by the size of the voltage on the gate, known as the ‘gate voltage’ (Vgs). If the voltage on the gate is positive, the transistor is ‘on’, allowing current to flow through the drain-source. If the voltage on the gate is negative, the transistor is ‘off’, stopping the current flow.The performance of the transistor is also affected by the ‘gate capacitance’ (Cgs), which is a measure of the amount of electric field that builds up between the gate and body (substrate) of the transistor when voltage is applied to the gate. This electric field affects the current flow through the transistor and helps determine its frequency response.The MRF6VP41KHR5 can be an incredibly useful device, designed to deliver reliable performance for a wide range of RF applications in fields such as cellular infrastructure, point-to-point and point-to-multi-point radio systems and more. Its high-efficiency capabilities allow for stable performance, and the voltage-controlled design ensures precision control over current flow. With a maximum drain-source voltage rating of 50V and a maximum on-resistance of 0.3ohm, it can easily handle high currents and frequencies, making it ideal for RF amplifier applications.

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