MRF6VP3450HSR5

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The MRF6VP3450HSR5 is a high-performance silicon N-channel RF power MOSFET. This device is ideal for commercial and industrial applications where performance and reliability are required. The MRF6VP3450HSR5 is designed to handle power up to 12.5 watts CDMA, GSM, and WiMAX applications.

The MRF6VP3450HSR5 is designed to operate with a gate-to-source voltage of 4V to 7V and is capable of achieving a maximum drain current of 17A. This device’s drain-to-source breakdown voltage is 15V which makes it well suited for RF power amplifiers in cellular and WiMAX systems. The MRF6VP3450HSR5 also has an outstanding RF performance, with an unpacked gain at 2.14GHz of 10.4 dB and a power added efficiency of 44%.

The MRF6VP3450HSR5 is based on MOSFET technology, where the MOSFET Gate acts as an insulated shield against gate voltage and current. This technology has enabled the device to reach the maximum current and drain-to-source breakdown voltage. Furthermore, the high breakdown voltage, low on-resistance, and high gain make this device an ideal choice for many RF amplifier applications.

The working principle of the MRF6VP3450HSR5 is based on electrical conduction. When a voltage is applied to the gate of the device, electrons will move from the source to the drain, creating a channel through which current can flow. The more voltage applied to the gate, the more current will flow. Since the device is insulated from the gate voltage and current, the device is protected from excessive current and voltage levels.

The main application field for the MRF6VP3450HSR5 is in the field of wireless communication. It has proven to be a reliable and efficient power amplifier for a variety of different cellular and WiMAX communication systems. In particular, this device has been extensively used in the WiMAX 802.16 and 802.20 standards, due to its superb performance and efficiency. Additionally, this device is also used in other application such as base station amplifiers and satellite communication.

In conclusion, the MRF6VP3450HSR5 is a high-performance silicon N-channel RF power MOSFET. This device offers excellent RF performance, with an impressive breakdown voltage, low on-resistance, and high gain. It is widely used for wireless communication systems, such as WiMAX, GSM, and CDMA applications. The device is based on MOSFET technology and is capable of reaching maximum drain current and drain-to-source breakdown voltage, making it a reliable, efficient, and cost-effective power amplifier.

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