MRF6VP121KHR5 Allicdata Electronics
Allicdata Part #:

MRF6VP121KHR5-ND

Manufacturer Part#:

MRF6VP121KHR5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 2CH 110V 1.03GHZ NI1230H
More Detail: RF Mosfet LDMOS (Dual) 50V 150mA 1.03GHz 20dB 1000...
DataSheet: MRF6VP121KHR5 datasheetMRF6VP121KHR5 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: LDMOS (Dual)
Frequency: 1.03GHz
Gain: 20dB
Voltage - Test: 50V
Current Rating: --
Noise Figure: --
Current - Test: 150mA
Power - Output: 1000W
Voltage - Rated: 110V
Package / Case: NI-1230
Supplier Device Package: NI-1230
Base Part Number: MRF6VP121
Description

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MRF6VP121KHR5 is a Field Effect Transistor (FET) designed for Radio Frequency (RF) power amplification applications such as amplifiers, linear amplifiers and switch amplifiers. This device is an enhancement-mode N-channel High Voltage MOSFET designed to amplify up to 10 GHz frequencies.

The MRF6VP121KHR5 has a gate threshold voltage in the range of 4.3 to 6.3 V, drain-source on-state resistance (Rds(on)) of 0.115 Ω, gate-drain drain-source breakdown voltage (BVdss) at 4.5 V, and has a maximum operating temperature of 175°C. MRF6VP121KHR5 is available in a TO-247 package on a 1.5” x 3.5” panel, which is suitable for automation processing and mass production applications.

The MRF6VP121KHR5’s working principle is based upon the flow of electrons between two terminals (source and drain) and their control through the gate socket. The gate socket, together with the source and drain, form a conducting channel between them. The source serves as the source of electrons and the drain acts as the collector, so that the electrons are gained into the gate terminal when the voltage between source and gate is greater than the threshold voltage.

The presence of electrons in the gate creates a field and creates an inversion layer in the p- region near the gate. The electric field due to the presence of the electrons creates a channel connecting the source and drain and allows the flow of electrons through it. By increasing the voltage between the source and gate, the inversion layer can be made wider allowing more current to flow.

The MRF6VP121KHR5 FET can be used for many applications such as power amplifiers, linear and switch amplifiers, Cellular Base Station application, Cordlessphones, PCS, Broadcast and point-to-point radios, satellite communications, automotive electronics, RF components, RF filtering, and more. It is also suitable for application in the military and telecom systems due to its robust operational characteristics and stability.

The MRF6VP121KHR5 device is a great solution for RF applications due to its low drain to source on-state resistance of 0.115 Ω, gate threshold voltage range from 4.3 to 6.3V, and a maximum operating temperature of 175°C. The device is also available in a TO-247 package on a 1.5” x 3.5” panel, which is suitable for automation processing and mass production applications.

The specific data is subject to PDF, and the above content is for reference

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