Allicdata Part #: | MRF6S27015NR1-ND |
Manufacturer Part#: |
MRF6S27015NR1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 68V 2.6GHZ TO270-2 |
More Detail: | RF Mosfet LDMOS 28V 160mA 2.6GHz 14dB 3W TO-270-2 |
DataSheet: | MRF6S27015NR1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.6GHz |
Gain: | 14dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 160mA |
Power - Output: | 3W |
Voltage - Rated: | 68V |
Package / Case: | TO-270AA |
Supplier Device Package: | TO-270-2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MRF6S27015NR1 is a useful and versatile transistor that can serve in a wide range of applications. As a RF (radio frequency) power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) the transistor is well suited for applications for video, audio, medical, and commercial data broadcast transmission as well as radio, television, LANs and other communications. It is a laterally diffused MOS technology (LDMOS) transistor.
The features of the MRF6S27015NR1 that make it suitable for a variety of applications include:
- High-power capability at a maximum of 1700 watts.
- High efficiency power.
- Frequency range of 24 MHz to 1000 MHz.
- Maximum off-state voltage of 80 volts.
- Low gate drive requirements.
- Low drain-source capacitance.
- Low gate charge.
- Low gate-drain capacitance.
The working principle of the MRF6S27015NR1 is quite complex but it is designed to serve as a radio frequency amplifier. The transistor consists of two components; the gate and the drain, which control the operation of the device. A high frequency electrical signal is sent to the gate, which causes the transistor to switch from off to on, allowing current to flow from the source to the drain and resulting in amplification of the signal. The transistor is designed to be capable of performing this switching at high frequency, allowing for high frequency applications such as communications.
The MRF6S27015NR1 is used in a variety of applications including telephony, HF (high frequency) radios, digital RF radios, electronic engineering and cable TV. The transistor is often used in high-speed digital connections and can be used in transmitters, receivers and amplifiers. The transistor is also effective in applications where low gate charge and low drain-source capacitance are necessary, such as in switching and digital systems. The MRF6S27015NR1 can be used in a wide variety of communications, audio and video applications.
Due to the high efficiency of the MRF6S27015NR1, it is an attractive choice for use in power amplifiers for both radio and television applications. The transistor’s high power capability, combined with its high efficiency make it well suited for use in high power radio and TV transmissions. The transistor’s low gate charge, drain-source capacitance and gate-drain capacitance are also useful for a variety of communication applications where power is necessary. The MRF6S27015NR1 is designed to be reliable, efficient and versatile, allowing it to serve in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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