MRF6V3090NR5

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MRF6V3090NR5 is an ideal device for high power gain applications. It is a 50V breakdown voltage, 17.5 ampere N–channel enhancement–mode MOSFET. It supports maximum drain source on–resistance, low gate–source capacitance, and exceptional transconductance. This N–channel MOSFET is intended to be used in RF power amplification applications. This device is produced using advanced MOSFET process technology, specially designed for high–performance RF applications. The method of its operation is enhancement mode.

The MRF6V3090NR5 MOSFET consists of a source and drain junction that are enhanced by an insulated gate field-effect transistor. In this device, the depletion layer between the drain and source can be modulated by changing the gate-source voltage. It is normally off or highly resistive due to its depletion layer. When external voltage is applied to the gate-source terminal, the voltage creates a highly conductive channel in the MOSFET, thus allowing electrons to move through the conducting channel from the source to drain. When the gate-source voltage is equal to the drain-source voltage, the device turns off and the electrons can not move anymore.

The MRF6V3090NR5 MOSFET is used in many applications such as pulsed power amplifiers (PPAs), radio frequency (RF) power amplifiers, RF switches, pulse forming networks (PFN) and high power radio receivers (HPR). It is also used in other applications such as microwave ovens, television receivers, home entertainment systems, public address systems, and industrial control systems. It is suitable for use in industrial, commercial and consumer applications.

The MRF6V3090NR5 is available in a small outline package to allow for easy handling and mounting onto small circuit boards. This device is capable of operating at frequencies up to 30MHz and can achieve power gains up to 20 dB. Furthermore, it has a gate-source capacitance of 0.2 pF, a reverse transfer capacitor of 11 nF, and a power gain of 17 dB.

The advantages of using the MRF6V3090NR5 MOSFET are its low operating temperature, excellent repeatability, outstanding temperature characteristics, and its small on-resistance. It also features a very high power gain, wide temperature range, high reselection rate, and low noise figure. All of these features make the MRF6V3090NR5 MOSFET perfect for applications requiring high power gain, high frequencies, and small on-resistance.

In conclusion, the MRF6V3090NR5 MOSFET is an ideal device for high power gain applications such as pulsed power amplifiers, RF power amplifiers, RF switches, pulse forming networks, and high power radio receivers. This device is capable of providing excellent electrical performance and a small on-resistance for all types of applications. Its benefits are its low operating temperature, repeatability, temperature characteristics and high power gain.

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