Allicdata Part #: | MRF6S27050HR5-ND |
Manufacturer Part#: |
MRF6S27050HR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 68V 2.62GHZ NI-780 |
More Detail: | RF Mosfet LDMOS 28V 500mA 2.62GHz 16dB 7W NI-780 |
DataSheet: | MRF6S27050HR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.62GHz |
Gain: | 16dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 500mA |
Power - Output: | 7W |
Voltage - Rated: | 68V |
Package / Case: | NI-780 |
Supplier Device Package: | NI-780 |
Base Part Number: | MRF6S27050 |
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The MRF6S27050HR5 is an N-Channel, Depletion Mode Field Effect Transistor (FET) designed for use in RF power amplifier circuits in the 200 to 550 MHz frequency range. Specifically, the device is suitable for use in frequencies up to 6GHz and provides excellent amplifier performance when used for high frequency amplification and switching applications.
The MRF6S27050HR5 is a 50V, 5A FET that is constructed from a single Gallium Arsenide (GaAs) die with an internal gold metallized drain. As such, it is a depletion-mode FET and is non-polarised. This makes it an ideal choice for RF circuitry due to its stability and immunity from breakdown and distortion at high frequencies. In addition, the device also offers exceptionally low noise for working in high frequency conditions.
The working principle of a depletion mode FET is similar to that of a field effect transistor (FET), but the drain-source voltage is used to control current flow through the device instead of a gate signal. This bias voltage controls the conductivity of the channel, allowing the channel to be switched on and off as required. The gate-source voltage determines the voltage across the channel which then controls the current flowing through the device. By changing this voltage, the current flow can be precisely controlled.
The MRF6S27050HR5\'s application field is extensive due to its excellent power handling capabilities. It is well suited for use in applications such as TV amplifiers, broadcasting and communication systems, cellular base stations, RF amplifiers and power oscillators. It can also be used in the construction of linear amplifiers, switching systems and other RF circuits that require high frequency operation and a high power handling capability.
In conclusion, the MRF6S27050HR5 is an excellent solution for high frequency and power handling applications. It is a non-polarised FET, making it ideal for use in RF circuits, and offers excellent power handling capabilities. Its application field is extensive, making it suitable for use in TV and broadcasting systems, communication systems, cellular base stations and other RF circuits. It also features low noise performance and easy current control, allowing it to be used in a variety of linear and switching applications.
The specific data is subject to PDF, and the above content is for reference
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