| Allicdata Part #: | MRF6S19200HR5-ND |
| Manufacturer Part#: |
MRF6S19200HR5 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | FET RF 66V 1.99GHZ NI780 |
| More Detail: | RF Mosfet LDMOS 28V 1.6A 1.93GHz ~ 1.99GHz 17.9dB ... |
| DataSheet: |  MRF6S19200HR5 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS |
| Frequency: | 1.93GHz ~ 1.99GHz |
| Gain: | 17.9dB |
| Voltage - Test: | 28V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 1.6A |
| Power - Output: | 56W |
| Voltage - Rated: | 66V |
| Package / Case: | NI-780 |
| Supplier Device Package: | NI-780 |
| Base Part Number: | MRF6S19200 |
Description
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The MRF6S19200HR5 is a high power N-Channel MOSFET that can be used in a variety of RF applications, especially in areas where linearity and high gain are paramount. This device enables single-stage high power operation allowing for low-cost, large-signal RF designs that cannot be achieved with discrete MOSFETs. In this article, we will discuss the application fields and working principle of MRF6S19200HR5.The MRF6S19200HR5 offers a variety of features that make it ideal for RF applications. First, it features a low threshold voltage and a low gate capacitance, which allow it to operate at high frequencies while simultaneously optimizing power performance. Additionally, it offers a high transconductance, high gain, and low On/Off ratio that maximize power-added efficiency. Furthermore, its low input impedance increases the power output capabilities of the device and its high-efficiency performance ensures that it can operate at higher frequencies with less distortion.In terms of RF applications, the MRF6S19200HR5 can be used for high-power amplifiers for cellular and data-transmission applications including WCDMA, DCS and GSM frequencies. Additionally, it can be used for multi-carrier modulation for generation of multiple station signals with reduced amplifier time-delay distortion. Additionally, it can be used for power amplifiers for point-to-point radio, WLAN and WiMAX applications.The working principle of the MRF6S19200HR5 is overall quite simple. It operates using the N-channel MOSFET Process, where the gate bias voltage is used to control the conductivity of the channel. The higher the gate bias voltage is set, the greater the device’s drain current becomes. The increased drain current will, in turn, increase the output power of the device, leading to an improved linearity and an increased RF performance on the output. A detailed explanation of the operation of the device can be found in its datasheet.To ensure an optimal output, the biasing must be set properly in order to minimize distortion and power loss. This can be achieved by the use of a combination of the gate bias voltage and gate impedance, as well as the draiune voltage and drain impedance. Additionally, the proper matching of input and output impedances is necessary to ensure maximum efficiency.Overall, the MRF6S19200HR5 is an ideal choice for high-power RF applications that require high linearity and high gain with improved power-added efficiency. With itslow threshold voltage, low body capacitance and low-input impedance, the device is able to achieve higher frequencies and improved power output, making it highly suitable for multiple applications.
The specific data is subject to PDF, and the above content is for reference
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