MRF6S21100NR1

The MRF6S21100NR1 is a high performance N-channel lateral Metal-Oxide-Silicon Field-Effect Transistor (MOSFET).The device has a maximum drain current of 11A, drain-source breakdown voltage of 100V, and a maximum operating junction temperature of 175°C.—>\/p>

The MRF6S21100NR1 is a broad band RF power MOSFET transistor, with outstanding power performance over a wide range of frequencies. It is suitable for use in power amplifier applications, such as high power radio transmitters, small cell base stations, or other transmitter applications. It can handle high input power levels for both continuous-wave and pulse modulation modes with low distortion and high efficiency. =>\/p>

The working principle of the MRF6S21100NR1 is based on the traditional MOSFET operation. The device consists of two gates connected to two power supplies, one of which controls a source and the other a drain. When there is source or drain current flow, controlled by the gate voltages, there is an electrostatic force between the gate and the channel which results in either electrons moving away from the gate-channel junction (or in the case of a p-channel MOSFET the holes) to form a conducting channel; or the channel collapses when the voltage across the gates is reversed. =>\/p>

The MRF6S21100NR1 is ideal for use in high power radio transmitters, wireless communication systems, and other RF applications where power efficiency and high power output are necessary. It can be used in a wide range of frequencies, including UHF and VHF, and is capable of handling high frequencies up to 1 GHz. The device’s inherently low on-resistance ensures high power delivery efficiency of up to 94%. The MRF6S21100NR1 also provides excellent RF linearity performance with low harmonic distortion. =>\/p>

In conclusion, the MRF6S21100NR1 is a high-performance radio frequency (RF) power MOSFET that is suitable for use in a wide range of applications. It can handle high power levels for both continuous-wave and pulse modulation modes, ensuring high efficiency and low distortion. The device is designed to operate at a wide range of frequencies up to 1 GHz and ensures excellent RF linearity performance with low harmonic distortion. =>\/p>