MRF6S9130HSR3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	880MHz
Gain:	19.2dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	950mA
Power - Output:	27W
Voltage - Rated:	68V
Package / Case:	NI-780S
Supplier Device Package:	NI-780S
Base Part Number:	MRF6S9130

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MRF6S9130HSR3 is a high-power RF Fet manufactured by Freescale Semiconductor. It is ideal for a number of applications, including wireless base-station antennas, high power broadband amplifiers, and beyond. It is one of the most advanced and powerful Fets on the market today, and is designed to provide superior performance in high power applications.This high-power RF Fet has been designed to operate in a wide range of medium to high power applications. It is capable of providing up to 37 Watts of power in 14.1 dbmV and 19.2 dbmV at 2GHz and 5GHz, respectively. With its highly efficient design, the MRF6S9130HSR3 can provide better performance and more efficient operation than its predecessors.The working principle of the MRF6S9130HSR3 is a process known as Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This process involves the use of a gate which is electrically insulated from the source and the drain. When a voltage is applied to the gate from an external source, it creates an electrostatic field (E-Field) which controls current flowing through the transistor. This control of current allows for a range of power control applications, depending on the type and magnitude of the voltage applied.The MRF6S9130HSR3 is a great choice for a variety of applications, such as high power broadband amplifiers, wireless base-station antennas, and RF transceivers. Its excellent power and high gain performance, with the added efficiency of the MOSFET process, make the MRF6S9130HSR3 the perfect choice for a wide variety of high power applications.In terms of its application field, the MRF6S9130HSR3 is ideal for any medium to heavy power requirement. It is a perfect choice for applications such as high power amplifiers, wireless base-station antennas, RF transceivers, and other high power needs. It is also suitable for a range of existing applications such as amplifiers, high power broadband amplifiers, and transceivers, making it an ideal component for customers looking to upgrade their current equipment.In conclusion, the MRF6S9130HSR3 is a superior component for those looking for high power performance. Its efficient design, combined with the powerful Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) process, make the MRF6S9130HSR3 the perfect choice for a wide array of medium to high power applications. It is also suitable for existing systems that are looking to upgrade, and its resistant nature means that it is able to provide excellent performance and reliability even in demanding environments. With its robust design and wide range of applications, the MRF6S9130HSR3 is the ideal component for any application requiring high power and excellent performance.

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