MRF6S9130HSR5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MRF6S9130HSR5 is a RF power MOSFET manufactured by Freescale. It is available in an industry-standard SOT-469 package. MRF6S9130HSR5 is designed for stringent high power, high frequency switching applications such as base stations and radar systems. It is able to operate at higher voltages and frequencies for greater power scaling and versatility.

MRF6S9130HSR5 has a nominal drain-source voltage of 30V and a breakdown voltage of 25V. It has a maximum drain-source voltage rating of 65V and a maximum drain-source current rating of 6.3A. It has a very low on-resistance of 175 mΩ. It is capable of handling very high current densities with excellent thermal performance and low power loss.

MRF6S9130HSR5 is a normally-off device. It has an enhancement-mode operation mode, and the gate must be biased to turn the MOSFET on. This type of device is especially suitable for switching high power, at high frequencies.

MRF6S9130HSR5 works by applying a voltage to the gate of the MOSFET. As voltage is applied to the gate, a negative electric charge forms across the gate and the source. This creates an electric field between the gate and the source which repels electrons from the source to the drain.

As these electrons flow from the source to the drain, the MOSFET’s internal resistance decreases and current passes from the drain to the source. This current is controlled using the gate voltage. The higher the voltage applied to the gate, the greater the current will flow.

The operating temperature range of the MRF6S9130HSR5 is -40°C to +125°C. The maximum junction-to-case thermal resistance is 0.55°C/W and the maximum power dissipation is 44W.

Due to its high power, high frequency switching capabilities, MRF6S9130HSR5 is primarily used in the wireless communication and base station industries. This includes point-to-point radio communication systems, cellular radio systems, and microwave radio systems.

MRF6S9130HSR5 has also been used in radar systems, as well as industrial, power, and medical applications.

In summary, MRF6S9130HSR5 is a normally-off RF power MOSFET designed for high power, high frequency switching applications such as base stations and radar systems. It has a very low on-resistance and is capable of handling large current densities with excellent thermal performance and low power loss.

The specific data is subject to PDF, and the above content is for reference