MRF6V14300HR3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Transistor Type:	LDMOS
Frequency:	1.4GHz
Gain:	18dB
Voltage - Test:	50V
Current Rating:	--
Noise Figure:	--
Current - Test:	150mA
Power - Output:	330W
Voltage - Rated:	100V
Package / Case:	NI-780
Supplier Device Package:	NI-780
Base Part Number:	MRF6V14300

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Introduction to MRF6V14300HR3

The MRF6V14300HR3 is a high-voltage, high-power RF Field Effect Transistor (FET) which can be used in various applications including, but not limited to mobile infrastructure, point-to-point radio, radar and satellite communications, television broadcast and other communications systems. This device features excellent output power, efficiency and gain over the frequency range of 0.3-3.0GHZ. This high-performance FET was developed specifically to replace older and lower-performance FETs in existing RF circuits. The main benefits of the device are its low noise, high linearity and wide-frequency range, as well as its impressive performance and power capabilities.

MRF6V14300HR3 Application Field and Working Principle

The MRF6V14300HR3 is best suited for use in high-frequency, high-power applications, typically in the 0.7 to 6.0GHZ range. Its high voltage rating allows it to easily tolerate the high-energy RF signals and its robust construction allows for reliable operation over a wide temperature range. The device can be used in numerous applications including low-noise amplifiers (LNAs), power amplifiers (PAs) and medium-power gain blocks. It can also be used in applications such as radar, television broadcast, satellite communications, point to point radio and various other radio frequency (RF) communications systems.In operation, the MRF6V14300HR3 is essentially an RF switch. When the gate voltage is negative, the device is in its “on” state and current flows between the drain and source terminals. However, when the gate voltage is positive, the device is in its “off” state and current does not flow between the drain and source terminals. Therefore, the voltage applied to the gate terminal can be used to control the conduction of the FET’s drain and source terminals.When the MRF6V14300HR3 is used as an amplifier, its gate voltage (Vg) is connected to the gate electrode of a preceding RF amplifier, allowing for the transfer of the signal from the input stage to the output stage. The MRF6V14300HR3 then amplifies the signal further, allowing the device to reach its maximum output power and gain while maintaining low levels of noise and high levels of efficiency and linearity.

Conclusion

The MRF6V14300HR3 is a high-voltage, high-power RF Field Effect Transistor (FET) which is best suited for use in high-frequency, high-power applications. The device features excellent output power, efficiency and gain over the frequency range of 0.3-3.0GHZ and can be used in various applications including mobile infrastructure, point-to-point radio, radar and satellite communications, television broadcast and other communications systems. In operation, the MRF6V14300HR3 is essentially an RF switch and its gate voltage can be used to control the conduction of its drain and source electrodes.

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