MRF6VP2600HR5 Allicdata Electronics
Allicdata Part #:

MRF6VP2600HR5TR-ND

Manufacturer Part#:

MRF6VP2600HR5

Price: $ 198.13
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 2CH 110V 225MHZ NI-1230
More Detail: RF Mosfet LDMOS (Dual) 50V 2.6A 225MHz 25dB 125W N...
DataSheet: MRF6VP2600HR5 datasheetMRF6VP2600HR5 Datasheet/PDF
Quantity: 50
1 +: $ 198.13000
10 +: $ 192.18600
100 +: $ 188.22300
1000 +: $ 184.26100
10000 +: $ 178.31700
Stock 50Can Ship Immediately
$ 198.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: LDMOS (Dual)
Frequency: 225MHz
Gain: 25dB
Voltage - Test: 50V
Current Rating: --
Noise Figure: --
Current - Test: 2.6A
Power - Output: 125W
Voltage - Rated: 110V
Package / Case: NI-1230
Supplier Device Package: NI-1230
Base Part Number: MRF6VP2600
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MRF6VP2600HR5, a high-performance silicon bipolar transistor, is widely used in radio frequency (RF) applications. It is widely used in the field of wireless infrastructure, such as radio base station and radio access networks.

MRF6VP2600HR5 is suitable for low to medium power applications in the 5GHz frequency range when increased output power is needed. It has very consistent performance over temperature, importance for the applications in the field of wireless infrastructure. This makes MRF6VP2600HR5 an excellent choice for highly reliable wireless network solutions.

The working principle of MRF6VP2600HR5 is to contain two terminals that are connected to a source of electrical current. When the current is applied to the terminals, it creates a magnetic field that moves electrons and creates a flow of current. This process creates an energy conversion that is sent out to the circuit and creates a current flow.The MRF6VP2600HR5 can be connected to a transistor, which further amplifies the signal to get desired output.

MRF6VP2600HR5 is a good choice for many radio frequency applications, thanks to its very consistent performance over temperature and its high gain at 5GHz. It also has a wide variety of uses, from antenna and amplifier designs to signal processing and system tuners.

MRF6VP2600HR5 is being used in a wide variety of RF applications, such as cellular base stations, wireless LANs, WiMAX, GPS, UMTS and other related consumer electronic applications. It is also proving to be a popular choice for RF systems that require high output power and high linearity.

MRF6VP2600HR5 offers unprecedented scalability, allowing designers to create radio transceivers, antennas and amplifiers that can be tuned and improved with ease. By using the MRF6VP2600HR5, designers can reduce the number of components needed and design simpler, more efficient systems without sacrificing performance.

In summary, MRF6VP2600HR5 is a reliable and high-performance silicon bipolar transistor that is increasingly used in a variety of radio frequency (RF) applications. It has excellent performance over temperature, high linearity and can easily be tuned and improved. This makes it the perfect choice for wireless infrastructure applications, such as radio base station and radio access networks.

The specific data is subject to PDF, and the above content is for reference

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