MRF6S19100GNR1

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The MRF6S19100GNR1 is a high-voltage, high-power, laterally diffused metal oxide semiconductor field-effect transistor (LDMOSFET) that provides excellent gain and output power with low distortion while operating at frequencies up to 2.0 GHz. It is engineered to optimize performance in compact, high-power wireless infrastructures such as WiMAX base stations and cellular base transceiver systems.

The application field of the device is mainly limited to wireless communications. It is used for sending and receiving signals in long-range wireless communications, such as WiMAX base stations, cell phone base transceiver systems, Bluetooth and ZigBee applications, as well as for power amplifiers for GSM and CDMA operations. Furthermore, it can be used for Wi-Fi, RFID, Radar and satellite transceiver applications.

In addition, the MRF6S19100GNR1 is well suited to amplify digital and analog modulated signals with low distortion. The device is available in the compact RoHS-compliant QFN (Quad-Flat no-lead) package, which enables its applications in consumer electronic products.

The operating principle of the MFR6S19100GNR1 is based on its lateral diffused MOSFET (L-DMOS) design. This type of transistor features a drain-to-gate back-bias arrangement with internal lateral doping that minimizes variations in the threshold voltage. This ensures reliably high output power and gain, even in the presence of high capacitor impedance.

The transistor’s construction allows for a drain-to-source breakdown voltage of 500V and current drain of 10.5A. This ensures safe operation for both the device and connected equipment. It also has a large number of small parasitic capacitances, which helps reduce noise. The device also boasts of an extremely low flatness error rate, which contributes to an exceptionally low distortion rate.

The large gate width and drive current also aids in improved gain flatness. This ensures signal levels stay more uniform, resulting in improved and more consistent communication link performance. The device also exhibits hot and cold operation, providing improved linearity and superior signal-to-noise ratio at extreme temperature ranges.

The device also features protection against electrostatic discharge (ESD) up to a rated voltage of 8kV. This ensures the MRF6S19100GNR1 is well-suited for use in environments where static buildup is high.

In conclusion, the MRF6S19100GNR1 is a high-voltage, high-power, later ally diffused metal oxide semiconductor field effect transistor (LDMOSFET) that is well-suited for wireless communications and other applications that require high gain and output power. The transistor’s outstanding features make it an excellent choice for both OEM and consumer electronics applications.

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