MRF6S23100HR3

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The MRF6S23100HR3 is a high gain N-Channel, Enhancement-mode planar broad band RF power transistor from Freescale Semiconductor. This part contains 25.7 dB of gain into a 2 x 4 mm package size. It is designed for use in cellular base station, driver and output power stages. This page discusses the application field and working principle of the MRF6S23100HR3 MOSFET.

Application Field

The MRF6S23100HR3 MOSFET is an ideal choice for use in high-power applications where low distortion and high linearity is needed. It has a maximum output power of 100 W and is suitable for use in cellular base station transmitter output power stages such as CDMA and GSM systems. The MOSFET can also be used in the output power stage of radio broadcast transmitters, broadcast FM and High Definition radio amplifiers. It is also suitable for Satellite and wide band communication systems, aircraft and military radios and Medical equipment.

Working Principle

The MRF6S23100HR3 is an N-channel, enhancement mode power transistor designed for use as an RF power amplifier in high-power portable applications. The MOSFET is fabricated on a thyristor-like planar structure and has high thermal stability and low current leakage. The device is internally matched to provide 50 Ohms impedance across the drain and source terminals. This allows the device to be used in linear applications such as cellular base station transmitters, which require high RF power output levels with excellent linearity.This device utilizes a planar structure for greater thermal efficiency and is rated for a maximum operating temperature of 175 degrees C. The source connecting to the gate terminal is fully encapsulated to prevent current leakage and ESD protection. The MRF6S23100HR3 includes an integral temperature protection circuit which shuts off the output circuitry before any damage can occur. This provides enhanced device reliability in harsh environmental conditions.

Conclusion

The MRF6S23100HR3 is a high gain N-Channel, Enhancement-mode planar broad band RF power transistor from Freescale Semiconductor. This part contains 25.7 dB of gain into a 2 x 4 mm package size and is designed for use in cellular base station, driver and output power stages. It has a maximum output power of 100 W and is suitable for use in high-power applications where low distortion and high linearity is needed. This device utilizes a planar structure for greater thermal efficiency and is rated for a maximum operating temperature of 175 degrees C.

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