Allicdata Part #: | MRF6VP3091NR1-ND |
Manufacturer Part#: |
MRF6VP3091NR1 |
Price: | $ 62.93 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 115V 860MHZ TO270-4 |
More Detail: | RF Mosfet LDMOS (Dual) 50V 350mA 860MHz 22dB 18W T... |
DataSheet: | MRF6VP3091NR1 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 57.21270 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual) |
Frequency: | 860MHz |
Gain: | 22dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 350mA |
Power - Output: | 18W |
Voltage - Rated: | 115V |
Package / Case: | TO-270AB |
Supplier Device Package: | TO-270 WB-4 |
Base Part Number: | MRF6VP3091 |
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MRF6VP3091NR1 is a power metal-oxide-semiconductor field-effect transistor (MOSFET) designed to operate over a broad range of frequencies. This MOSFET is suitable for use in a variety of applications including radio frequency (RF) amplifiers, radio frequency circuits and radio transceivers.
The MRF6VP3091NR1 is a N-channel enhancement mode device that features a maximum frequency performance of up to 2.5GHz. It is a 50-volt device with a 9-ampere drain current rating. It features an integrated gate protection diode, an optimized gate oxide layer and an improved thermal design.
The MRF6VP3091NR1 is an advanced MOSFET design that has a number of unique features which enhance its performance. It has a high transition frequency of up to 2.5GHz and a maximum drain current rating of up to 9 amperes. It also has an integrated gate protection diode which helps protect the gate oxide layer from different phenomena. Moreover, its optimized thermal design helps to optimize its performance while maximizing its long-term reliability.
The MRF6VP3091NR1 is used in a wide range of applications, such as RF amplifiers, circuits and transceivers. It has a high transition frequency of up to 2.5GHz and a maximum drain current rating of up to 9amperes, making it a suitable choice for use in high-performance applications. Additionally, its optimized thermal design helps to ensure its long-term reliability in a variety of applications.
The working principle of the MRF6VP3091NR1 is quite simple. It is an N-channel enhancement-mode device. When a voltage is applied to its gate, it turns on and allows current to flow from its source to its drain. When the gate voltage is removed, the device turns off, stopping any current flow from its source to its drain. This type of voltage-controlled switching device is commonly used in RF circuits and amplifiers, allowing them to rapidly and accurately switch between different frequencies.
In summary, the MRF6VP3091NR1 is an advanced MOSFET device designed to provide superior performance in a variety of applications. Its optimized gate oxide layer and integrated gate protection diode help to improve its performance while maximizing its long-term reliability. Additionally, its high transition frequency of up to 2.5GHz and drain current rating of up to 9amperes make it a suitable choice for use in RF circuits and amplifiers. Its simple working principle allows it to switch quickly between different frequencies and make accurate adjustments.
The specific data is subject to PDF, and the above content is for reference
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MRF6V3090NR1 | NXP USA Inc | 35.53 $ | 1000 | FET RF 110V 860MHZ TO270-... |
MRF6VP3091NBR1 | NXP USA Inc | 41.95 $ | 1000 | FET RF 2CH 115V 860MHZ TO... |
MRF6VP3091NBR5 | NXP USA Inc | 46.69 $ | 1000 | FET RF 2CH 115V 860MHZ TO... |
MRF6VP3091NR1 | NXP USA Inc | 62.93 $ | 1000 | FET RF 2CH 115V 860MHZ TO... |
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MRF6V2300NR5 | NXP USA Inc | 98.08 $ | 1000 | FET RF 110V 220MHZ TO-270... |
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