MRF6VP3091NR5

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS (Dual)
Frequency:	860MHz
Gain:	22dB
Voltage - Test:	50V
Current Rating:	--
Noise Figure:	--
Current - Test:	350mA
Power - Output:	18W
Voltage - Rated:	115V
Package / Case:	TO-272-4
Supplier Device Package:	TO-272-4
Base Part Number:	MRF6VP3091

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MRF6VP3091NR5 Application Field and Working Principle

The MRF6VP3091NR5 is a high performance N-Channel RF power MOSFET specifically designed for use in medium to high power amplifiers operating in the 1.8 to 650MHz range. This device be used in a wide number of drive requirements; from CW to pulsed operation. The device is optimized for applications where rated power needs to be provided in a limited amount of printed circuit board space.

Construction

The MRF6VP3091NR5 is built using a fifth generation high performance technology, which combines a 3 dimensional structure and a Super High-phosphorus silicon for dense cell layout. The result is a N-channel MOSFET with high gain, low noise and excellent linearity.

Application Fields

The MRF6VP3091NR5 can be used in numerous RF applications such as:

• High power amplifier
• Wi-Fi and IEEE 802.11 b/g networks
• Bluetooth, WiMAX and Local Area Networks (LANs)
• Avionics, satellite and military communication systems.

Working Principle

The MRF6VP3091NR5 is a high power N-channel RF power MOSFET, which utilizes the MOSFET transfer characteristic between the source and the drain (channel) to control the flow of electrons. The device is designed to have low insertion loss and high linearity.The working principle of the device is as follows: An applied voltage (Vgs) between the gate and source of the MOSFET changes the conduction resistance between the source and the drain, thus allowing current to flow through the device. The value of Vgs required for conduction is referred to as the “threshold voltage” and is typically 4V for the MRF6VP3091NR5. The current flowing through the MOSFET is directly proportional to the voltage applied; as the voltage is increased, the current increases and vice versa. In RF applications, this allows the device to be used as an amplifier or as a switch to control the flow of RF signals.

Conclusion

The MRF6VP3091NR5 is a high performance N-Channel RF power MOSFET that is specifically designed for use in medium to high power applications in the 1.8 to 650MHz range. The device is optimized for use in a wide range of drive requirements in WiFi, BLUETOOTH, WiMAX and LAN applications. The device utilizes the MOSFET transfer characteristic to control current flow and can be used for RF amplifier or switching applications.

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