Allicdata Part #: | MRF6VP41KHSR7-ND |
Manufacturer Part#: |
MRF6VP41KHSR7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 110V 450MHZ NI1230S |
More Detail: | RF Mosfet LDMOS (Dual) 50V 150mA 450MHz 20dB 1000W... |
DataSheet: | MRF6VP41KHSR7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | LDMOS (Dual) |
Frequency: | 450MHz |
Gain: | 20dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 150mA |
Power - Output: | 1000W |
Voltage - Rated: | 110V |
Package / Case: | NI-1230S |
Supplier Device Package: | NI-1230S |
Base Part Number: | MRF6VP41 |
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The MRF6VP41KHSR7 is a part of the MRF6V product family, which belongs to the class of transistors known as Field Effect Transistors (FETs). FET transistors are devices that use an electric field to control the flow of current through a channel of semiconductor material. This particular device is a type of FET called Metal Oxide Semiconductor Field Effect Transistor (MOSFET). MOSFETs are widely used in radio frequency (RF) applications due to their small size and low power requirements.
The MRF6VP41KHSR7 is designed for use in RF circuits, making use of its high output power and efficiency. The device is capable of operating in a wide range of frequency bands, from 1.7GHz to 2.9GHz, making it suitable for a variety of applications. It can be used in a variety of circuits, such as amplifiers, modulators, and switching circuits.
The MRF6VP41KHSR7 is a depletion mode MOSFET, meaning that it is normally on (or conducting) when there is no bias voltage. The device can be turned off by applying a negative bias voltage to the gate of the MOSFET, which will cause it to reduce or stop conducting current. The strength of the electric field between the MOSFET’s gate and the source determines how wide of a range is allowed to pass through the channel. This makes the device suitable for use in circuits such as amplifiers and modulators, since it can selectively allow only certain frequencies to pass.
The MRF6VP41KHSR7 is a high-frequency voltage amplifier, and it has a maximum gain of 10dB. The device has a power dissipation of 200W, and it can handle continuous drain currents up to 250mA. It is capable of operating at a wide range of frequencies, from DC to 500MHz. It is designed for use in circuits that require high efficiency and power, making it suitable for RF applications such as wireless communication.
The MRF6VP41KHSR7 is a robust and reliable device, making it well suited for use in a wide range of applications. It can be used in high-power, high-frequency circuits such as wireless data transmission and wireless microphone systems. It is also suitable for use in low-noise preamplifiers and small-signal amplification circuits. The device is also capable of being used in low-power switching circuits, due to its low power requirements and high switching speed.
In summary, the MRF6VP41KHSR7 is a depletion-mode MOSFET designed for use in high-frequency, high-efficiency applications. The device is capable of operating in a wide range of frequency bands and is suitable for use in a variety of circuits such as amplifiers, modulators, and switching circuits. It is a robust and reliable device, making it well suited for a range of uses, from high-power wireless data transmission to low-power switching circuits.
The specific data is subject to PDF, and the above content is for reference
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