NSBA115TF3T5G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	254mW
Mounting Type:	Surface Mount
Package / Case:	SOT-1123
Supplier Device Package:	SOT-1123
Base Part Number:	NSBA1*

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The NSBA115TF3T5G transistor, classified as a single, pre-biased bipolar junction transistor, is a robust device that has a wide variety of applications in the electronics industry. This device is specifically designed for low-voltage and high-current, low-noise operation. The NSBA115TF3T5G is designed to replace inferior and/or expensive alternatives found in power control, automotive, and industrial applications. The device uses a proven bipolar junction transistor technology, which is a current-controlled device consisting of three p-n junctions. It uses an emitter base junction, a base collector junction and a collector emitter junction. The junction between the emitter and collector junctions create the NPN (negative positive negative) transistor construction when biased properly with voltage and current.The NSBA115TF3T5G is designed to be in an already biased state, allowing it to be used either as a switch or an amplifier. This transistor can be used in applications such as motor control, power management, HVAC, and much more. The device offers low input bias current (Ib), low input capacitance (Cin), and low voltage noise. Additionally, it features a low saturation voltage, making it a great choice for power applications.In its largest package (TO-220), the NSBA115TF3T5G consists of three pins: the emitter, the collector, and the base. As its name states, the base is pre-biased, which means that it is already set to the necessary potential in order to modulate the current flow between the emitter and collector. The emitter is used to inject electrons into the base while the collector is used to collect the electrons that have been modulated. The current gain of the NSBA115TF3T5G is defined as the ratio of the collector current to the emitter current when the base voltage remains constant. This gain is known as βF and ranges from 35 to 65. The device has a low-noise current to voltage conversion which makes it ideal for use in signal processing, such as amplifiers and interface circuits.The NSBA115TF3T5G offers a high breakdown voltage between its collector and emitter of 75V and a maximum collector current of 1A. This makes it suitable for a variety of different power levels. This device also features an operating temperature range from -40°C to +150°C, making it suitable for potentially extreme operating conditions. The NSBA115TF3T5G is a robust, economical and efficient device that can be quickly dropped into existing designs and provide reliable performance. Its low cost, durability, and high current handling capabilities make it an ideal choice for many applications. This device is also easy to use and highly reliable, making it an essential tool in the electronics industry.

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