NSBA124EDXV6T5G

DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Base Part Number:	NSBA1*
Supplier Device Package:	SOT-563
Package / Case:	SOT-563, SOT-666
Mounting Type:	Surface Mount
Power - Max:	500mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	22 kOhms
Resistor - Base (R1):	22 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 PNP - Pre-Biased (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The NSBA124EDXV6T5G is a type of transistor array specifically designed for pre-biased applications. It is an example of a Bipolar Junction Transistor (BJT).A transistor is an electrical component with various uses and characteristics. It is an active component that has three terminals, known as the collector, the base, and the emitter. In BJTs the current entering the base flows from the collector to the emitter and can be controlled with the external bias. A transistor array, on the other hand, is a group of transistors connected in a particular way. This allows for multiple transistors to work together and also makes it possible to control them all with a single signal. The transistors in the array are usually identical, meaning they all have the same function and characteristics. The NSBA124EDXV6T5G is a pre-biased transistor array designed specifically for applications that require faster switching times. It consists of twelve individual NPN transistors connected in a specific way. It is capable of providing fast switching times and has a high gain-bandwidth product.The NSBA124EDXV6T5G’s main function is to control the current across a circuit. Its transistors are pre-biased, which means that the external bias voltage applied to the base of the transistors is already set. This makes the transistors ready for use and allows for faster switching times.In order to understand the working principle of the NSBA124EDXV6T5G, it is important to first understand how a typical BJT works. A BJT is a three-terminal active component that consists of two different regions - the collector and the base. When a current enters the base region, it is amplified and exits the collector region. This is how current is controlled without disrupting the voltage across the component. The NSBA124EDXV6T5G works in much the same way. The transistors in the array are connected in a way that allows each of them to amplify the current entering its base. Since the array is pre-biased, the bias voltage is already set when the component is put into use, allowing for faster switching times.The NSBA124EDXV6T5G can be used in a variety of applications such as power supply systems, voltage regulation, and signal conditioning. Due to its high gain-bandwidth product, it is especially useful for applications requiring fast switching times. It can also be used for signal amplifying and current switching.Overall, the NSBA124EDXV6T5G is an example of a pre-biased transistor array that is specifically designed for applications requiring fast switching times. Its transistors are connected in a way that allows them to amplify the current entering their bases. This makes the component suitable for a variety of applications such as power supplies, voltage regulation, signal conditioning, signal amplifying, and current switching.

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