NSBA114TDXV6T5 Allicdata Electronics
Allicdata Part #:

NSBA114TDXV6T5OS-ND

Manufacturer Part#:

NSBA114TDXV6T5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2PNP PREBIAS 0.5W SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: NSBA114TDXV6T5 datasheetNSBA114TDXV6T5 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Base Part Number: NSBA1*
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 500mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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NSBA114TDXV6T5 Application Field and Working PrincipleThe NSBA114TDXV6T5 is a pre-biased, bipolar transistor array manufactured by NXP Semiconductors. This device is designed to provide customers with a cost-effective solution for multiplexing and signal switching in robotic applications. The integrated transistors are optimized for low-noise switching.The NSBA114TDXV6T5 is a five-stage device which includes three predefined NPN transistors and two pre-biased PNP transistors. The three predefined transistors are optimized for low- noise switching, which makes them ideal for multiplexing and signal switching. In addition to the predefined transistors, the device also includes two pre-biased PNP bipolar transistors which are optimized for operation in low current applications. This device has a wide range of applications in robotics, such as signal processing, motor control, and sensor applications.This device features an operating temperature range of -65 °C to +150°C and a supply voltage range of 4.5V to 30V. It has a maximum current dissipation of 200mA, with a maximum voltage of 12V. The maximum power dissipation is 2W.The NSBA114TDXV6T5 uses a triple-transistor array which enables customers to switch between two separate input signals. The two pre-biased PNP transistors are used to amplify the signals, in order to reduce noise and improve performance. The device also features a fast switching time, which is essential for multiplexing applications.The device is designed to provide customers with an integrated solution for multiplexing and signal switching in applications where space and low power are key considerations. Its integration of pre-biased transistors and the ability to switch between two input signals make it an ideal choice for robotic applications. The device also offers a wide temperature range, low current consumption, and high power dissipation, which gives it additional suitability for applications with extreme operating conditions.In conclusion, the NSBA114TDXV6T5 is a pre-biased bipolar transistor array manufactured by NXP Semiconductors which is designed to provide customers with a cost-effective solution for multiplexing and signal switching in robotic applications. The device provides a wide temperature range, low current consumption, and high power dissipation, which make it suitable for use in a variety of applications. Its triple transistor array and fast switching time enable customers to switch between two different input signals with minimal noise, making it an ideal choice for robotic tasks.

The specific data is subject to PDF, and the above content is for reference

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