NSBA114YDP6T5G Allicdata Electronics
Allicdata Part #:

NSBA114YDP6T5G-ND

Manufacturer Part#:

NSBA114YDP6T5G

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2PNP PREBIAS 0.408W SOT963
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: NSBA114YDP6T5G datasheetNSBA114YDP6T5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.06767
Stock 1000Can Ship Immediately
$ 0.08
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Base Part Number: NSBA1*
Supplier Device Package: SOT-963
Package / Case: SOT-963
Mounting Type: Surface Mount
Power - Max: 408mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NSBA114YDP6T5G is a part of a transistors family called Bipolar (BJT) Arrays, Pre-Biased. It is a very popular device in the field of electronics, used mainly when multiple base and emitter signals are needed. NSBA114YDP6T5G has critical applications in a wide range of industries, such as communication, automotive, aerospace, audio, radio and military applications.

The NSBA114YDP6T5G is a six-transistor, dual array that combines multiple emitter and base signals to create two circuits in one package. This makes it useful in applications where multiple base and emitter signals are needed. The device consists of two 4-input arrays of transistors. Each transistor array can be connected to either emitters or bases. The pre-biased transistors allow for greater utilization of the available area and increase device stability.

The working principle of the NSBA114YDP6T5G is quite simple. Each of the four input signals are applied one at a time and a corresponding base or emitter voltage is generated in the array. The transistor array is connected to the device’s output, providing an amplified signal. The output signal of the NSBA114YDP6T5G can then be used in a variety of applications such as audio systems, automotive applications and radio communications. The device also has the capability to switch signals quickly and accurately, providing precise control over the output signals.

In the field of automotive applications, NSBA114YDP6T5G can be used for communication between different automotive components such as the ECU and the engine control unit. It can also be used for audio systems and other types of communication. The device can also be used for controlling and monitoring the status of multiple components in an aircraft. In addition, the NSBA114YDP6T5G can be used in radio communications, allowing for more accurate and precise communication.

The NSBA114YDP6T5G is also widely used in a variety of other fields. In audio systems, it can be used to create multiple levels of gain amplification, allowing for better sound quality. In radio communication, it can provide precise and accurate transmission of audio signals. The NSBA114YDP6T5G can also be used in the military, providing a secure method of communication. In addition, the device can be used to control the movements of a robotic arm or any other robotic system.

The NSBA114YDP6T5G is a reliable and powerful device, which is why it has become so popular in the field of electronics. It offers a wide range of applications and is used in various industries. The pre-biased transistors make the NSBA114YDP6T5G extremely efficient and the device’s ability to switch signals quickly can save time and money. The NSBA114YDP6T5G is a great choice for applications that require multiple base and emitter signals.

The specific data is subject to PDF, and the above content is for reference

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