
Allicdata Part #: | NSBA124XDXV6T1OS-ND |
Manufacturer Part#: |
NSBA124XDXV6T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP PREBIAS 0.5W SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Base Part Number: | NSBA1* |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NSBA124XDXV6T1 transistors represent the latest transistor technology and are optimized for use in modem communication technologies. These transistors are a complimentary pair of NPN and PNP transistors in an array or package and have been pre-biased.
NSBA124XDXV6T1 transistors are implemented for the use in analog applications where low power is required. They are often used in differential applications where high input impedance and low thermal drift is necessary. The transistors have a high breakdown voltage, allowing for very precise signal processing, as well as overvoltage protection.
The main application field of NSBA124XDXV6T1 transistors is found in analog communication systems. This includes cellular phones, modems, RFID, radio receivers and transmitters, power amplifiers, microwave ovens, and industrial automation. Additionally, they are also used in automotive applications such as airbags, anti-lock braking systems, and engine control.
The working principle of NSBA124XDXV6T1 transistors is to provide power gain by amplifying an incoming signal. The transistors are able to amplify the voltage of the signal, allowing for improved signal quality and power efficiency. They are also able to provide overvoltage protection since they can switch quickly to prevent an inverted, unwanted signal from being delivered.
To achieve power gain with the NSBA124XDXV6T1 transistors, a signal is applied to the input pins, which are connected to the base of the transistors. An electrical signal is then amplified by the transistors, and the output is taken from the collector pins. The power gain is determined by the difference between the input signal and the amplification of the output signal.
The transistors also have the ability to rapidly switch, as well as to provide overvoltage protection. This is achieved by the transistors’ low base-emitter saturation voltage, which allows for quick switching and lower breakdown voltage levels. Additionally, since the transistors are pre-biased, the device is designed to ensure that the saturation voltage is kept low, even when faced with high levels of reverse bias. This allows the transistors to shut off when an unexpected or high-voltage signal is presented, helping to prevent damage to the overall circuit.
The NSBA124XDXV6T1 transistors are optimized for use in modern communication technologies, and are the perfect choice for applications that require low power consumption and precise signal processing. They are also capable of providing overvoltage protection and rapid switching, making them ideal for a wide range of applications including automotive, microwave, and industrial automation.
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