| Allicdata Part #: | NSBA115EDXV6T1GOSTR-ND |
| Manufacturer Part#: |
NSBA115EDXV6T1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS 2PNP PREBIAS 0.5W SOT563 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
| DataSheet: | NSBA115EDXV6T1G Datasheet/PDF |
| Quantity: | 1000 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
| Base Part Number: | NSBA1* |
| Supplier Device Package: | SOT-563 |
| Package / Case: | SOT-563, SOT-666 |
| Mounting Type: | Surface Mount |
| Power - Max: | 500mW |
| Frequency - Transition: | -- |
| Current - Collector Cutoff (Max): | 500nA |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
| Series: | -- |
| Resistor - Emitter Base (R2): | 100 kOhms |
| Resistor - Base (R1): | 100 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Current - Collector (Ic) (Max): | 100mA |
| Transistor Type: | 2 PNP - Pre-Biased (Dual) |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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:The NSBA115EDXV6T1G is an advanced pre-biased transistor array designed for use in a variety of different applications. This device provides a highly integrated solution that combines the advantages of both a conventional BJT array and a pre-biased single transistor. With its small size and high power output, it is well suited for use in demanding mission-critical applications.
The NSBA115EDXV6T1G is constructed using a high-powered BJT array that is pre-biased at a voltage of 6V. This pre-biasing allows the array to operate with a low supply voltage while still providing a high output power. It also reduces power consumption and provides better heat dissipation than similar devices. The array operates in a standard emitter-follower configuration with a small-signal gain of up to 100.
The device is well-suited for amplifier and switching applications due to its wide bandwidth, large power output, and low noise levels. It also provides a wide dynamic range and high gain-bandwidth product. It has a low distortion level of 0.1% THD and a high output current of up to 150mA. This makes it ideal for use in applications such as audio power amplifiers, instrumentation amplifiers, audio pre-amplifiers, and D/A converters.
The NSBA115EDXV6T1G uses an NPN bipolar device fabricated in a Monolithic Integrated Circuit (MIC). It is designed for monolithic integration with other bipolar devices and with complementary FETs. This allows multiple devices to be combined in a single package, reducing the number of components required. The device is also designed for a wide operating temperature range, allowing it to operate in a variety of different environments.
The NSBA115EDXV6T1G has a wide range of applications in industry and consumer electronics. It is often used in audio amplifiers for producing clear, high-quality sound. It is also used in medical devices, process-control systems, and industrial controllers. It is also suitable for automotive applications, including power supplies, sensors, and control systems.
The NSBA115EDXV6T1G is a versatile and powerful device that combines the advantages of a conventional BJT array and a pre-biased single transistor. It provides a unique solution to a wide range of applications and is well-suited for use in a variety of demanding applications. It provides a high power output with low power consumption, a wide dynamic range, and a low distortion level, making it ideal for use in audio, automotive, and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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| NSBA144EDXV6T5 | ON Semicondu... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.5W S... |
| NSBA123EDXV6T1 | ON Semicondu... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.5W S... |
| NSBA123TF3T5G | ON Semicondu... | 0.08 $ | 1000 | TRANS PREBIAS PNP 254MW S... |
| NSBA124EDP6T5G | ON Semicondu... | 0.08 $ | 1000 | TRANS 2PNP PREBIAS 0.408W... |
| NSBA123JDXV6T1 | ON Semicondu... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.5W S... |
| NSBA123EDXV6T1G | ON Semicondu... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.5W S... |
| NSBA144EF3T5G | ON Semicondu... | 0.05 $ | 1000 | TRANS PREBIAS PNP 254MW S... |
| NSBA114EF3T5G | ON Semicondu... | 0.08 $ | 1000 | TRANS PREBIAS PNP 254MW S... |
| NSBA114TDP6T5G | ON Semicondu... | 0.07 $ | 1000 | TRANS 2PNP PREBIAS 0.408W... |
| NSBA124EF3T5G | ON Semicondu... | 0.08 $ | 1000 | TRANS PREBIAS PNP 254MW S... |
| NSBA143EDP6T5G | ON Semicondu... | 0.08 $ | 1000 | TRANS 2PNP PREBIAS 0.408W... |
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| NSBA144WDP6T5G | ON Semicondu... | 0.08 $ | 1000 | TRANS 2PNP PREBIAS 0.408W... |
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| NSBA123JDXV6T1G | ON Semicondu... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.5W S... |
| NSBA123JDXV6T5G | ON Semicondu... | 0.06 $ | 1000 | TRANS 2PNP PREBIAS 0.5W S... |
| NSBA124XDXV6T1 | ON Semicondu... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.5W S... |
| NSBA123EF3T5G | ON Semicondu... | 0.07 $ | 1000 | TRANS PREBIAS DUAL PNPPre... |
| NSBA123JDP6T5G | ON Semicondu... | 0.08 $ | 1000 | TRANS 2PNP PREBIAS 0.408W... |
| NSBA114TF3T5G | ON Semicondu... | 0.08 $ | 1000 | TRANS PREBIAS PNP 254MW S... |
| NSBA114YF3T5G | ON Semicondu... | 0.08 $ | 1000 | TRANS PREBIAS PNP 254MW S... |
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NSBA115EDXV6T1G Datasheet/PDF