NSBA115EDXV6T1G Allicdata Electronics
Allicdata Part #:

NSBA115EDXV6T1GOSTR-ND

Manufacturer Part#:

NSBA115EDXV6T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2PNP PREBIAS 0.5W SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: NSBA115EDXV6T1G datasheetNSBA115EDXV6T1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Base Part Number: NSBA1*
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 500mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Series: --
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NSBA115EDXV6T1G is an advanced pre-biased transistor array designed for use in a variety of different applications. This device provides a highly integrated solution that combines the advantages of both a conventional BJT array and a pre-biased single transistor. With its small size and high power output, it is well suited for use in demanding mission-critical applications.

The NSBA115EDXV6T1G is constructed using a high-powered BJT array that is pre-biased at a voltage of 6V. This pre-biasing allows the array to operate with a low supply voltage while still providing a high output power. It also reduces power consumption and provides better heat dissipation than similar devices. The array operates in a standard emitter-follower configuration with a small-signal gain of up to 100.

The device is well-suited for amplifier and switching applications due to its wide bandwidth, large power output, and low noise levels. It also provides a wide dynamic range and high gain-bandwidth product. It has a low distortion level of 0.1% THD and a high output current of up to 150mA. This makes it ideal for use in applications such as audio power amplifiers, instrumentation amplifiers, audio pre-amplifiers, and D/A converters.

The NSBA115EDXV6T1G uses an NPN bipolar device fabricated in a Monolithic Integrated Circuit (MIC). It is designed for monolithic integration with other bipolar devices and with complementary FETs. This allows multiple devices to be combined in a single package, reducing the number of components required. The device is also designed for a wide operating temperature range, allowing it to operate in a variety of different environments.

The NSBA115EDXV6T1G has a wide range of applications in industry and consumer electronics. It is often used in audio amplifiers for producing clear, high-quality sound. It is also used in medical devices, process-control systems, and industrial controllers. It is also suitable for automotive applications, including power supplies, sensors, and control systems.

The NSBA115EDXV6T1G is a versatile and powerful device that combines the advantages of a conventional BJT array and a pre-biased single transistor. It provides a unique solution to a wide range of applications and is well-suited for use in a variety of demanding applications. It provides a high power output with low power consumption, a wide dynamic range, and a low distortion level, making it ideal for use in audio, automotive, and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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