NSBA124EDXV6T1 Allicdata Electronics
Allicdata Part #:

NSBA124EDXV6T1OS-ND

Manufacturer Part#:

NSBA124EDXV6T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2PNP PREBIAS 0.5W SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: NSBA124EDXV6T1 datasheetNSBA124EDXV6T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Base Part Number: NSBA1*
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 500mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Series: --
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Transistors - Bipolar (BJT) - Arrays, Pre-Biased

The NSBA124EDXV6T1 is an array of pre-biased transistors known as a bipolar junction transistor (BJT). The array is used extensively in digital electronics and computer applications. It is an ideal solution for high speed, low power, and flexible circuit designs.The NSBA124EDXV6T1 is a pre-biased array consisting of eight individual transistors that can be operated independently or in parallel at the same time. The array is able to operate at frequencies as high as 50MHz and is designed to reduce switching time. The array also features protection against voltage overshoot and shorting as well as protection against over-current. The array also has a thermal design that reduces power dissipation and helps increase system performance.BJTs are used in many different applications including amplifiers, voltage regulator circuits, power supplies, switching circuits, digital communications, radio systems, and other digital electronics. BJTs are made with a base terminal, a collector terminal, and an emitter terminal. The base terminal is used to control the current flow from the collector to the emitter. The current then flows from the collector terminal to the emitter terminal.BJT transistors can be classified as either N-type or P-type. N-type transistors are used to amplify current and P-type transistors are used for voltage control. BJTs are widely used in many digital circuits including logic gates, flip-flops, and shift registers. They can also be used in analog circuits like amplifiers and filters.The NSBA124EDXV6T1 is an array of pre-biased transistors that offers several benefits. Its pre-biased design makes it easier to use and reduces switching time. Its high-speed operation allows it to be used in a variety of applications. Its thermal design helps reduce power dissipation and increase system performance. The array is also very robust, offering excellent reliability and protection against voltage overshoot and shorting as well as protection against over-current that can cause damage to the system.In conclusion, the NSBA124EDXV6T1 is an array of pre-biased transistors ideal for use in digital electronics and computer applications. It is designed to offer high speed, low power, and flexible circuit designs. Its pre-biased design helps reduce switching time and the array\'s thermal design helps reduce power dissipation. The array is very robust and offers excellent reliability for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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