Allicdata Part #: | NSBA124XDXV6T1G-ND |
Manufacturer Part#: |
NSBA124XDXV6T1G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP PREBIAS 0.5W SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | NSBA124XDXV6T1G Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.06549 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 500mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NSBA124XDXV6T1G is an integrated device with pre-biased transistors and comes in an insulated standard type package, which can be used for multiple applications. This device has been developed to increase performance reliability, minimize noise generation and reduce current consumption compared to discrete device arrays. It consists of 6 transistors, a capacitor, a resistor and a diode, making it a very economical and compact solution. It also offers significant savings in board space and assembler.
The NSBA124XDXV6T1G device offers a very wide range of applications in industrial, automotive and consumer electronics. It can be used as an interface between voltage sources and the processing circuit, such as a signal processing circuit, where an additional discrete array may be required. It can also be used to control or switch large currents or voltages and provide protection from transients. Additionally, the device allows for very fast switching times, reduced corrosion due to its stainless steel structure, and improved noise and thermal performance. The device also features excellent durability and high signal integrity.
The device\'s pre-biased transistors are configured in a Darlington configuration, allowing for higher current gains and reduced thresholds for fast switching. The capacitor and the resistor, along with the diode, provide the necessary control and protection for the transistors, resulting in improved reliability and performance. The device also offers a dynamic swing of up to 16A, a high peak current of up to 20A, high ESD and EMI protection, low standby current and low thermal resistance.
The working principle of the NSBA124XDXV6T1G device is simple and straight forward. When a voltage is applied, the bias current of the transistors is increased, allowing for faster switching speeds. The capacitor and resistor, along with the diode, protect the device from transients, noise and other disturbances, while the stainless steel structure prevents corrosion. The device also boasts excellent noise immunity and thermal performance.
In summary, the NSBA124XDXV6T1G device offers an extremely wide range of applications, thanks to its pre-biased transistors, compact design, cost savings and improved performance. It can be used as an interface to control large currents and voltages, in conjunction with signal processing circuits and for protection from transients. The device is also durable, provides high signal integrity, low thermal resistance and excellent noise immunity.
The specific data is subject to PDF, and the above content is for reference
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