Allicdata Part #: | NSBA123EDXV6T1OS-ND |
Manufacturer Part#: |
NSBA123EDXV6T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP PREBIAS 0.5W SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | NSBA123EDXV6T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 8 @ 5mA, 10V |
Base Part Number: | NSBA1* |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 2.2 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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A transistor array, sometimes referred to as an integrated circuit or an IC, is a single semiconductor package consisting of multiple transistors arranged in a particular pattern. They are used in many applications, such as amplifying signals, logic functions, and providing power. NSBA123EDXV6T1 is a pre-biased transistor array typically used for low-power applications such as amplifier pre-bias and noise reduction. In this article, we will discuss the application field and working principle of NSBA123EDXV6T1.
NSBA123EDXV6T1 is mainly used in low-power applications such as the pre-bias of amplifiers and the reduction of noise. It is designed to operate with a small operating voltage and low current capabilities. Its pre-biased design improves output performance and reduces power consumption. The pre-bias allows the transistor to start functioning at a lower voltage and without the need for an external voltage source.
The NSBA123EDXV6T1 is a dual-transistor array containing two 2N3704 NPN transistors in a simple 3-pin package. Both transistors are pre-biased or "pre-biased" in their collector-emitter pin configuration. Each transistor has its own bias resistor, allowing it to be used independently or in combination with other transistors. The two transistors are connected in a common source configuration, which enables them to configure as either a single-ended or differential driver.
The working principle of the NSBA123EDXV6T1 is based upon the NPN amplifier configuration. When an input signal is applied to the base of the transistor, it is amplified and a proportional output signal is produced at the output terminal of the device. The output of the device is determined by the ratio between the collector voltage and the emitter voltage. This ratio is determined by the resistor values of the pre-biasing circuit. By varying the resistor values, the transistor can be biased to operate over a wide range of input signal levels.
The NSBA123EDXV6T1 is a low-power, pre-biased transistor array suitable for a wide range of low-power applications. It offers improved output performance and reduced power consumption due to its pre-biased design. The device is easy to use and configure as either a single-ended or differential driver. Moreover, it has a wide range of operating voltages and current capabilities, making it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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