NSBA114TDXV6T1 Discrete Semiconductor Products

DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 5mA, 10V
Base Part Number:	NSBA1*
Supplier Device Package:	SOT-563
Package / Case:	SOT-563, SOT-666
Mounting Type:	Surface Mount
Power - Max:	500mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 1mA, 10mA
Series:	--
Resistor - Emitter Base (R2):	--
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 PNP - Pre-Biased (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The NSBA114TDXV6T1 belongs to the Transistors - Bipolar (BJT) - Arrays, Pre-Biased family of components. Pre-Biased transistors are transistors that are already biased with a particular voltage so that they will begin to conduct current when a small amount of current is applied. The NSBA114TDXV6T1 is a four-channel NPN silicon junction transistor array. It consists of four individual transistors that are housed in a single package and arranged in a series connection. The most common uses for this type of transistor array are in switching applications, such as controlling the flow of electricity in a circuit. In addition, the NSBA114TDXV6T1 can be used for a variety of analog purposes, including signal amplification and signal conversion. The NSBA114TDXV6T1 has several advantages that make it desirable for certain applications. The package is designed for minimal interference and dimensions, so it is suitable for tight spaces. The four transistors are arranged in series and are thus able to withstand higher current levels than single transistors. The transistor is also able to operate in high temperature environments up to 150°C (302°F), making it suitable for industrial applications. In terms of its working principle, the NSBA114TDXV6T1 is a four-channel NPN silicon junction transistor array. An NPN transistor is composed of a three-layer semiconductor with two P-type zones and one N-type zone. It operates using the base-collector depletion zone, which is the area between the base and the collector. When a current is applied to the base, the electrons the energy from the current flow in the N-type layer. The electrons move to the P-type layer and create a depletion zone in the middle. This depletion zone creates a voltage between the base and the collector, which controls the flow of current between the base and collector and thus allows for amplification and switching. The NSBA114TDXV6T1 is used in a variety of applications, including signal amplification, signal conversion, and switching. Its pre-biased circuitry is beneficial for applications that require minimal power consumption, low leakage current, and high speed. In addition, its high temperature capability makes it suitable for industrial applications. Ultimately, the NSBA114TDXV6T1 is a reliable and efficient transistor array that is well-suited for a variety of applications.

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