NSBA144EDP6T5G Allicdata Electronics

NSBA144EDP6T5G Discrete Semiconductor Products

Allicdata Part #:

NSBA144EDP6T5GOSTR-ND

Manufacturer Part#:

NSBA144EDP6T5G

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2PNP PREBIAS 0.408W SOT963
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: NSBA144EDP6T5G datasheetNSBA144EDP6T5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.06337
16000 +: $ 0.05928
24000 +: $ 0.05451
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: --
Power - Max: 408mW
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963
Base Part Number: NSBA1*
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NSBA144EDP6T5G is a bipolar transistor array pre-biased with either high or low-current gain composed of seven p-n-p transistors. It is an ideal type of transistor used in applications requiring high-voltage, high-current, or low-noise signals. This type of transistor array is used in various electrical and electronic equipment, including television sets, motor controllers, amplifiers, and computers.

A pre-biased transistor array consists of one or more transistors connected in parallel with a single power supply. The transistors\' gain is determined by their bias current, which is the difference between the positive and negative collector-emitter voltages when the transistor is turned off. The more negative the voltage, the lower the gain is, and vice versa.

The NSBA144EDP6T5G is designed to be used in applications requiring high-voltage, high-current, or low-noise signals. The device has a low capacitance and a low input capacitance. This eliminates the high capacitive loading that is typically present in other BJT arrays. This transistor array can provide high switching speeds with fast turn-on and turn-off characteristics.

The NSBA144EDP6T5G has the ability to operate over a wide range of input voltages, allowing the user to precisely control the gain and enable or disable selected outputs by changing the bias current. This feature makes it suitable for use in applications requiring high-current, high-voltage, or low-noise noise signals such as current amplifiers, voltage regulators, and digital-to-analog converters.

The NSBA144EDP6T5G is designed for operation in low-operating current range, which enables the device to provide efficient performance at high frequencies. The device can withstand very high currents that cause avalanche breakdown, which makes it an ideal choice for applications requiring a high-speed response to sudden changes in input signals.

The NSBA144EDP6T5G is also designed with a thermal protection mechanism that prevents the device from failing due to excessive temperature. This feature makes the device capable of being used in applications where temperature conditions may vary, such as in the presence of ambient heat.

The NSBA144EDP6T5G features a wide range of features that make it suitable for various applications. It is robust, reliable, and can operate in harsh conditions. It is also easy to use and program, and is capable of producing low-noise signals. This makes it an excellent choice for applications requiring high-voltage, high-current, and low-noise signals.

The specific data is subject to PDF, and the above content is for reference

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