NSBA123JDXV6T5G Allicdata Electronics
Allicdata Part #:

NSBA123JDXV6T5GOS-ND

Manufacturer Part#:

NSBA123JDXV6T5G

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2PNP PREBIAS 0.5W SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: NSBA123JDXV6T5G datasheetNSBA123JDXV6T5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.04820
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Base Part Number: NSBA1*
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 500mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NSBA123JDXV6T5G Pre-Biased Array is a transistor configuration consisting of two NPN transistors connected in series, with the collector of each transistor connected to the base of the other. This arrangement provides two transistors which are inherently biased with a negative voltage. This configuration is commonly used in analog and high frequency applications as a long term stable, low distortiondevice.

The primary advantage of the NSBA123JDXV6T5G Pre-Biased Array is that it is inherently stable, meaning it requires no external bias or control to remain in a linear operating region. This makes it ideal for applications that require long term stability and repeatability. In addition, the configuration results in low distortion levels. As such, it is commonly used for audio, RF and other similar applications.

The working principle of the NSBA123JDXV6T5G is based on the fact that Emitter-Base junction of an NPN transistor is reverse biased when the base is at a lower voltage than the emitter. This creates a negative bias voltage which prevents current from flowing in the transistor until the base-voltage is increased above that of the emitter. In the NSBA123JDXV6T5G configuration, the two transistors share the same base voltage, thus providing a well-defined quiescent current and a constant operating point.

The NSBA123JDXV6T5G Pre-Biased Array has many applications in the electronics industry. It is often used in precision voltage regulators, high quality audio amplifiers, low distortion oscillators, and high frequency switched-mode power supplies. Additionally, it can be used to construct current sources, buffered comparators, linear integrated circuits, RF filters, and many other circuits.

The NSBA123JDXV6T5G Pre-Biased Array is a versatile and reliable device for a wide variety of applications. It is inherently stable, reliable and low distortion, making it ideal for many different application designs. It is also relatively straightforward to construct and is easily integrated into many existing circuits. As such, it is a popular choice for creating a wide range of electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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