Allicdata Part #: | NSBA114EDP6T5G-ND |
Manufacturer Part#: |
NSBA114EDP6T5G |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP PREBIAS 0.338W SOT963 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | NSBA114EDP6T5G Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.04139 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Base Part Number: | NSBA1* |
Supplier Device Package: | SOT-963 |
Package / Case: | SOT-963 |
Mounting Type: | Surface Mount |
Power - Max: | 338mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NSBA114EDP6T5G is a multi-emitter transistor array pre-biased which is specially designed to produce high linearity performance and gain flatness. It is a semiconductor device with three terminals, usually constructed of multiple small BJT (Bipolar Junction Transistor) devices with same emitter, base and collector. The array package serves as a high voltage power transistor with excellent temperature stability.
The working principle of NSBA114EDP6T5G is based on the physical properties of the BJT. In the physical structure, the BJT has four terminal pins. The two bases are connected with an array structure and the two collectors are connected respectively with two emitters. When the current increased in the base, the voltage at both emitters will be reduced and then the collector-output current will be increased accordingly.
NSBA114EDP6T5G has some specific application fields. These fields include automotive applications, reliable switching and power line control, high frequency switching and high precision linear control, low noise and low power consumption. It can be used in automotive applications such as power line control, power electronics, motor control and more. Moreover, NSBA114EDP6T5G provides high linearity performance and gain flatness, so it can be used in high frequency switching and high precision linear control. It also has very low noise and power consumption, making it an ideal choice for low noise and low power consumption applications.
The good thermal stability of the NSBA114EDP6T5G makes it suitable for automotive applications. The thermal stability of the device is determined by its thermal resistance between the ambient temperature and the junction temperature. It also helps the device to achieve high accuracy in the linear control, which is important for the reliable and stable switching operations. In addition, its compact structure makes it suitable for use in a wide range of automotive applications.
In conclusion, NSBA114EDP6T5G is a multi-emitter transistor array pre-biased which is especially designed for automotive applications. It has excellent thermal stability and provides high linearity performance and gain flatness. It is suitable for use in automotive applications such as power line control, power electronics, motor control and more. In addition, its low noise and low power consumption make it an ideal choice for low noise and low power consumption applications.
The specific data is subject to PDF, and the above content is for reference
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