NSBA124EF3T5G Allicdata Electronics
Allicdata Part #:

NSBA124EF3T5G-ND

Manufacturer Part#:

NSBA124EF3T5G

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 254MW SOT1123
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: NSBA124EF3T5G datasheetNSBA124EF3T5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.06767
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 254mW
Mounting Type: Surface Mount
Package / Case: SOT-1123
Supplier Device Package: SOT-1123
Base Part Number: NSBA1*
Description

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The NSBA124EF3T5G transistor is part of a family of single, pre-biased transistors known as Bipolar Junction Transistors (BJTs). This kind of transistor is widely used for many types of applications, such as amplifiers, switch circuits, and current sources, due to its special properties. The NSBA124EF3T5G is specifically designed for applications where there is a need for low noise operation, with a high speed capability, and for use in temperature critical applications. In this article, we will explore the characteristics and working principle of this type of transistor, as well as its several applications.

The NSBA124EF3T5G is a NPN semiconductor device composed of three layers of a semiconducting material, in a sandwich structure. This kind of transistor is often referred to as a three-terminal device, due to the fact that it has three active terminals, named the base, the emitter, and the collector. The base of the transistor is used to control the operation of the device, while the emitter and collector control the current flow between them, allowing current to flow across the junction of the two layers when the base is activated.

The working principle of the NSBA124EF3T5G is that of a voltage-controlled switch. This means that when a voltage is applied to the base of the transistor, it creates an electric field which turns the transistor on and off, controlling the current flow between the collector and the emitter. This action serves as an on/off switch for the entire circuit, allowing for the control of current flow across the semiconductor device.

The NSBA124EF3T5G transistor is particularly useful for applications such as audio amplifiers, RF amplifiers, and power supplies. It is also used in temperature-critical applications, such as in medical devices, as its ability to handle a wide range of temperatures makes it ideal for such uses. In addition, the NSBA124EF3T5G is capable of fast switching, meaning it can rapidly turn currents on and off. This makes it suitable for use in digital devices such as microprocessors, memory chips, and other digital circuits where fast switching is essential.

The NSBA124EF3T5G is also used in switching power supplies, as its ability to handle high frequency switching as well as its high power handling capacity makes it ideal for powering electrical devices. Its high current carrying capacity makes it ideal for use in automobile engines, as well as in industrial applications. In addition, its excellent thermal efficiency allows it to be used in a wide variety of applications where heat is a factor, such as in LED lighting.

The NSBA124EF3T5G is also widely used for motor control, as its fast switching speed, current carrying capacity, and reliable performance make it suitable for this use. It is also used in applications such as communications networks and industrial machines, due to its excellent reliability, performance, and power handling capacity.

The NSBA124EF3T5G transistor is a very versatile and reliable device, capable of providing excellent performance in a wide variety of applications. Its fast switching speed, current carrying capacity, reliability, and wide temperature range make it particularly useful for many types of applications. Its versatility and reliability make it highly sought after, and it is widely used in a variety of industries and devices due to its many advantageous characteristics.

The specific data is subject to PDF, and the above content is for reference

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