Allicdata Part #: | NSBA114YF3T5G-ND |
Manufacturer Part#: |
NSBA114YF3T5G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 254MW SOT1123 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | NSBA114YF3T5G Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.06767 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 254mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-1123 |
Supplier Device Package: | SOT-1123 |
Base Part Number: | NSBA1* |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NSBA114YF3T5G is a single, pre-biased, bipolar junction transistor (BJT). Bipolar junction transistors are components that control current and voltage based on the application of a voltage or current. The NSBA114YF3T5G is an NPN type which means that current flows from the collector to the emitter when a small current is applied to the base. The NSBA114YF3T5G is a pre-biased transistor, which means it is already biased at a certain level and is ready to operate at a moment’s notice with no additional biasing.
One of the primary application fields of the NSBA114YF3T5G is in power supply and audio amplifier circuits. This transistor offers excellent performance when used in linear applications such as amplifiers, due to its high current capacity, voltage control capabilities and low noise characteristics. It is a popular choice for use in audio and video equipment, automobiles and other electronic applications. In applications such as audio amplifiers and DC-DC converters, the NSBA114YF3T5G can be used to drive and control large amounts of current.
The working principle of the NSBA114YF3T5G is based on the fact that a small input current at the base-emitter junction causes a larger current to flow between the collector and emitter. The transistor works as a current-controlled switch, with the input current controlling the current flowing between the collector and emitter. This input current, also known as the base current, is generated externally. When the base current is increased, more current flows between the collector and emitter, and conversely when the base current is decreased, less current flows between the collector and emitter.
The NSBA114YF3T5G also has an internal reverse current protection feature, which prevents the transistor from becoming damaged by high-voltage surges. This is an extremely useful feature for applications in which the transistor may be exposed to large voltage transients. Additionally, the NSBA114YF3T5G has a wide operating temperature range and supports both positive and negative temperature coefficients. This makes it highly suitable for use in a wide variety of applications.
In conclusion, the NSBA114YF3T5G is a single, pre-biased, bipolar junction transistor with a wide range of application fields and superior characteristics. Its main fields of use are in power supply and audio amplifier circuits, where its ability to control large currents, low noise operation and its reverse current protection feature makes it an attractive option. Its working principle is also based on the input current providing control over the current flowing between the collector and emitter. The NSBA114YF3T5G is a very robust and reliable transistor that is capable of performing in any situation.
The specific data is subject to PDF, and the above content is for reference
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