NSBC114TDXV6T5 Allicdata Electronics
Allicdata Part #:

NSBC114TDXV6T5OS-ND

Manufacturer Part#:

NSBC114TDXV6T5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.5W SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: NSBC114TDXV6T5 datasheetNSBC114TDXV6T5 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Base Part Number: NSBC1*
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 500mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NSBC114TDXV6T5 is a Pre-Biased Bipolar Transistor Array from ON Semiconductor. It is composed of six NPN transistors and is designed for use in automotive applications.

This transistor array is Pre-Biased to ensure low bias conditions and optimum performance. The NPN transistors provide high speed switching capabilities for better for power management. It is constructed with a low-cost planar chip which reduces the system cost and complexity. In addition, it has a very thick gate oxide which ensures an exceptionally low ESD rating.

The NSBC114TDXV6T5 has a maximum switching current of 25 mA and a collector-emitter saturation voltage of 0.2 V. It also has impressive power dissipation of 5.0 W, making it ideal for use in high power applications. Furthermore, it features a maximum storage temperature range of -55 to +150 °C for operation in a wide range of harsh environments.

The NSBC114TDXV6T5 utilizes a PNP structure which provides several advantages over traditional designs. Firstly, the PNP structure increases the temperature range of the device, resulting in improved temperature conditions in the system. The PNP structure also allows for higher switching frequencies, enabling it to reach higher frequencies as required by certain applications. Lastly, the thin gate oxide reduces leakage current and thereby improves efficiency.

The working principle of the NSBC114TDXV6T5 can be explained as follows. When a voltage is applied to its base terminal, current flows through the transistor. This current then flows through the collector and emitter terminals, providing the necessary power to the load connected to them. As the current increases, the base-emitter junction is forward-biased and the transistor is turned on. This causes the collector-emitter voltage to drop and the transistor to turn off. The transistor can then be turned off and on by controlling the base voltage.

The NSBC114TDXV6T5 is an ideal application for automotive power management applications due to its excellent switching speed, low cost, and small size. It can also be used in charge controllers, voltage regulators, and motor drivers. Additionally, it has applications in medical electronics, industrial automation, and computer peripherals.

In conclusion, the NSBC114TDXV6T5 is an ideal Bipolar Array Pre-Biased Transistor for automotive and other demanding applications. It has an excellent switching speed, low power dissipation, and an exceptionally low ESD rating. Furthermore, its PNP structure enables higher operating temperatures, low leakage current, and improved efficiency.

The specific data is subject to PDF, and the above content is for reference

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